Effects of interdiffusion on the band alignment of GeSi dots

Wan, J.; Luo, Y. H.; Jiang, Z. M.; Jin, G.; Liu, J. L.; Wang, Kang L.; Liao, X. Z.; Zou, J.
September 2001
Applied Physics Letters;9/24/2001, Vol. 79 Issue 13
Academic Journal
The interdiffusion effects on the band alignment of the GeSi dots embedded in Si matrix were studied by temperature- and excitation-power-dependent photoluminescence measurements. A different power-dependent behavior of the photoluminescence for the as-grown and the annealed samples was observed. It was suggested that the band alignments of the dots changed from type II to type I after annealing due to the Ge/Si interdiffusion. The decrease of the valence band offset, which was also induced by the Ge/Si interdiffusion, was observed from the temperature-dependent photoluminescence measurements. © 2001 American Institute of Physics.


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