TITLE

Origin of photoluminescence around 2.6–2.9 eV in silicon oxynitride

AUTHOR(S)
Noma, Takashi; Seol, Kwang Soo; Kato, Hiromitsu; Fujimaki, Makoto; Ohki, Yoshimichi
PUB. DATE
September 2001
SOURCE
Applied Physics Letters;9/24/2001, Vol. 79 Issue 13
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A broad photoluminescence (PL) around 2.6–2.9 eV is known to appear in hydrogenated silicon oxynitride. Although its origin was reported to be Si–N bonds, it is not so clear since the material contains hydrogen. In the present research, we have confirmed that the same PL appears in silicon oxynitride grown by nitriding of silicon dioxide. The depth profile of the PL intensity agrees with that of the nitrogen concentration. Furthermore, the emission spectrum, excitation spectrum, and decay constant of this PL agree with those of the PL observed in silicon nitride. Based on these results and theoretical discussion, the origin of the 2.6–2.9 eV PL is estimated to be Si–N bonds. © 2001 American Institute of Physics.
ACCESSION #
5193916

 

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