Real-time evolution of trapped charge in a SiO[sub 2] layer: An electrostatic force microscopy study

Buh, G. H.; Chung, H. J.; Kuk, Y.
September 2001
Applied Physics Letters;9/24/2001, Vol. 79 Issue 13
Academic Journal
Time-dependent motion of localized electrons and holes trapped in a SiO[sub 2] layer is visualized with electrostatic force microscopy. Both negative and positive charges of up to ∼10[sup 10] e/cm[sup 2] are trapped at a SiO[sub 2]–Si interface in ∼500-nm-diam area with a voltage stress between the tip and the sample. There is a higher probability for trapped charges to spread out in the plane direction than to de-trap toward the Si substrate. The dynamics is explained with diffusion and drift of the charges induced by Coulombic interaction. © 2001 American Institute of Physics.


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