TITLE

Solubility limit and precipitate formation in Al-doped 4H-SiC epitaxial material

AUTHOR(S)
Linnarsson, M. K.; Janson, M. S.; Zimmermann, U.; Svensson, B. G.; Persson, P. O. A˚.; Hultman, L.; Wong-Leung, J.; Karlsson, S.; Scho¨ner, A.; Bleichner, H.; Olsson, E.
PUB. DATE
September 2001
SOURCE
Applied Physics Letters;9/24/2001, Vol. 79 Issue 13
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Heavily Al-doped 4H–SiC structures have been prepared by vapor phase epitaxy. Subsequent anneals have been carried out in an Ar atmosphere in a rf-heated furnace between 1500 °C and 2000 °C for 0.5 to 3 h. Secondary ion mass spectrometry has been utilized to obtain Al concentration versus depth as well as lateral distributions (ion images). Transmission electron microscopy (TEM) has been employed to study the crystallinity and determine phase composition after heat treatment. A solubility limit of ∼2×10[sup 20] Al/cm[sup 3] (1900 °C) is extracted. Three-dimensional ion images show that the Al distribution does not remain homogeneous in layers heat treated at 1700 °C or above when the Al concentration exceeds 2×10[sup 20] cm[sup -3]. Al-containing precipitates are identified by energy-filtered TEM. © 2001 American Institute of Physics.
ACCESSION #
5193909

 

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