Ultraviolet and visible resonance-enhanced Raman scattering in epitaxial Al[sub 1-x]In[sub x]N thin films

Naik, V. M.; Weber, W. H.; Uy, D.; Haddad, D.; Naik, R.; Danylyuk, Y. V.; Lukitsch, M. J.; Auner, G. W.; Rimai, L.
September 2001
Applied Physics Letters;9/24/2001, Vol. 79 Issue 13
Academic Journal
We report the observation of ultraviolet and visible near-resonance enhanced Raman scattering in epitaxial wurtzite Al[sub 1-x]In[sub x]N (0001) (0≤x<0.7) thin films. The films (thickness∼150 nm) were grown by plasma source molecular beam epitaxy on sapphire (0001) substrates. A substantial spectral enhancement is seen for Al-rich samples using 244 nm (5.01 eV) radiation due to the closeness of their band gap energy to the excitation energy. On the other hand, samples with x∼0.6 (energy band gap ∼2.5 eV) show significant enhancement with 514.5 nm (2.41 eV) excitation. The A[sub 1](LO) and E[sub 2] zone center phonons have been observed for all the samples. The A[sub 1](LO) phonon frequency shows the expected decrease with increasing x. The E[sub 2] mode shows a two-mode behavior supporting the recent theoretical predictions. Due to increased resonance enhancement, strong second- and third-order spectra are seen in some films. © 2001 American Institute of Physics.


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