Metalorganic vapor-phase epitaxial growth and photoluminescent properties of Zn[sub 1-x]Mg[sub x]O(0≤x≤0.49) thin films

Park, W. I.; Yi, Gyu-Chul; Jang, H. M.
September 2001
Applied Physics Letters;9/24/2001, Vol. 79 Issue 13
Academic Journal
High-quality Zn[sub 1-x]Mg[sub x]O(0.00≤x≤0.49) thin films were epitaxially grown at 500–650 °C on Al[sub 2]O[sub 3](00·1) substrates using metalorganic vapor-phase epitaxy. By increasing the Mg content in the films up to 49 at. %, the c-axis constant of the films decreased from 5.21 to 5.14 Å and no significant phase separation was observed as determined by x-ray diffraction measurements. Furthermore, the near-band-edge emission peak position showed blueshifts of 100, 440, and 685 meV at Mg content levels of 9, 29, and 49 at. %, respectively. Photoluminescent properties of the alloy films are also discussed. © 2001 American Institute of Physics.


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