TITLE

Transport spectroscopy of the ultrasmall silicon quantum dot in a single-electron transistor

AUTHOR(S)
Saitoh, Masumi; Saito, Toshiki; Inukai, Takashi; Hiramoto, Toshiro
PUB. DATE
September 2001
SOURCE
Applied Physics Letters;9/24/2001, Vol. 79 Issue 13
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We investigate electron transport through the ultrasmall silicon quantum dot in a single-electron transistor. The device is fabricated in the form of a silicon point-contact channel metal–oxide–semiconductor field-effect transistor. The size of the formed dot is estimated to be as small as 5.3 nm. Negative differential conductance is clearly observed up to 25 K. It turns out that this is caused by discreteness of quantum levels in the silicon dot and variation of the tunneling rates to each level. The fine structure of conductance persists up to 77 K. Modeling of the electron transport through the silicon dot is carried out. Good agreement between experiment and calculation is obtained, which confirms the validity of our model. © 2001 American Institute of Physics.
ACCESSION #
5193903

 

Related Articles

  • Multi-terminal transport through semi-conductor quantum dots. Leturcq, R.; Graf, D.; Ihn, T.; Ensslin, K.; Driscoll, D. D.; Gossard, A. C. // AIP Conference Proceedings;2005, Vol. 772 Issue 1, p811 

    We report on a three-terminal tunneling experiment on a semiconductor quantum dot in the Coulomb blockade regime. The set-up allows us to measure directly the conductance matrix of this closed system. In the weak coupling regime, we can determine the coupling strengths of the dot to its...

  • Resonant-photon tunneling effect at 1.5 micron observed in GaAs/AlGaAs multi-layered structure containing InGaSb quantum dots. Yamamoto, Naokatsu; Akahane, Kouichi; Gozu, Shin-ichiro; Ohtani, Naoki // AIP Conference Proceedings;2005, Vol. 772 Issue 1, p1533 

    We demonstrated that a resonant-photon tunneling (RPT) effect for a 1.5 μm-waveband can be observed in a GaAs/AlGaAs multi-layered structure containing InGaSb quantum dots (QDs) and that the resonant-incidence angle can be controlled all-optically with a control light irradiation into the QDs...

  • Characteristics of a tunneling quantum-dot infrared photodetector operating at room temperature. Bhattacharya, P.; Su, X. H.; Chakrabarti, S.; Ariyawansa, G.; Perera, A. G. U. // Applied Physics Letters;5/9/2005, Vol. 86 Issue 19, p191106 

    We report high-temperature (240–300 K) operation of a tunneling quantum-dot infrared photodetector. The device displays two-color characteristics with photoresponse peaks at ∼6 μm and 17 μm. The extremely low dark current density of 1.55 A/cm2 at 300 K for 1 V bias is made...

  • Mechanisms of Low-Temperature High-Frequency Conductivity in Systems with a Dense Array of Ge0.7Si0.3 Quantum Dots in Silicon. Drichko, I. L.; D'Yakonov, A. M.; Smirnov, I. Yu.; Suslov, A. V.; Gal'Perin, Yu. M.; Yakimov, A. I.; Nikiforov, A. I. // Journal of Experimental & Theoretical Physics;Dec2005, Vol. 101 Issue 6, p1122 

    High-frequency (HF) conductivity in systems with a dense (with a density of n = 3×1011cm–2) array of self-organized Ge0.7Si0.3 quantum dots in silicon with different boron concentrations nB is determined by acoustic methods. The measurements of the absorption coefficient and the...

  • Interlevel transitions and two-photon processes in Ge/Si quantum dot photocurrent. Finkman, E.; Shuall, N.; Vardi, A.; Le Thanh, V.; Schacham, S. E. // Journal of Applied Physics;May2008, Vol. 103 Issue 9, p093114 

    Photocurrent spectra due to interlevel transitions of holes in Ge/Si quantum dots show several peaks in the range of 60–300 meV, which superlinearly increase with bias, indicating release of carriers by tunneling. The relative peak intensity drastically changes with applied voltage, its...

  • Electrons in artificial atoms. Gammon, Daniel // Nature;6/22/2000, Vol. 405 Issue 6789, p899 

    Focuses on semiconductor quantum dots. Optical studies of individual quantum dots; Interest in semiconductor quantum dots that interact strongly with light; Details of quantum confinement of electrons; Harnessing quantum mechanical properties.

  • Shell Structures in Self-Assembled InAs Quantum Dots Observed by Lateral Single Electron Tunneling Structures. Jung, M.; Hirakawa, K.; Ishida, S.; Arakawa, Y.; Kawaguchi, Y.; Komiyama, S. // AIP Conference Proceedings;2005, Vol. 772 Issue 1, p635 

    The electron transport through single self-assembled InAs quantum dots (QDs) grown on GaAs surfaces has been investigated by using metallic leads with narrow gaps. Clear Coulomb staircases and Coulomb gaps have been observed at 4.2 K. Coulomb blockade oscillation which reflects the shell filling...

  • Carrier relaxation in closely stacked InAs quantum dots. Nakaoka, T.; Tatebayashi, J.; Arakawa, Y.; Saito, T. // Journal of Applied Physics;7/1/2004, Vol. 96 Issue 1, p150 

    We have investigated the carrier relaxation in closely vertically stacked InAs quantum dots by time-resolved photoluminescence (PL) and micro-PL measurements. The PL decay and the excitation spectrum in the closely stacked dots are much different with those in single layer dots. The PL decay in...

  • Bias-selectable tricolor tunneling quantum dot infrared photodetector for atmospheric windows. Ariyawansa, G.; Apalkov, V.; Perera, A. G. U.; Matsik, S. G.; Huang, G.; Bhattacharya, P. // Applied Physics Letters;3/17/2008, Vol. 92 Issue 11, p111104 

    A tricolor infrared detector with bias-selectable peaks based on tunneling quantum dot infrared photodetector (T-QDIP) architecture is demonstrated. Photoabsorption takes place in In0.4Ga0.6As quantum dots (QDs) and the excited electrons are collected by resonant tunneling across an...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics