Si/SiGe modulation-doped heterostructures grown on silicon-on-insulator substrates for high-mobility two-dimensional electron gases

Di Gaspare, L.; Alfaramawi, K.; Evangelisti, F.; Palange, E.; Barucca, G.; Majni, G.
September 2001
Applied Physics Letters;9/24/2001, Vol. 79 Issue 13
Academic Journal
The growth of high-mobility modulation-doped Si/SiGe heterostructures on silicon-on-insulator substrates is demonstrated. The structural and electrical properties of the samples are reported to be comparable with those of similar samples grown on standard Si substrates. Electron mobilities as high as 2900 cm[sup 2]/Vs at room temperature and 8.2×10[sup 4] cm[sup 2]/Vs at 4.2 K were obtained. © 2001 American Institute of Physics.


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