Impact of domain wall displacements on the dielectric permittivity of epitaxial Ba[sub 0.5]Sr[sub 0.5]TiO[sub 3] films

Boikov, Yu. A.; Claeson, T.
September 2001
Applied Physics Letters;9/24/2001, Vol. 79 Issue 13
Academic Journal
Contributions of ferroelectric domain wall oscillations to the loss factor, tan δ, and the real part of the dielectric permittivity, &Vegr;[sup ′], of 700 nm thick Ba[sub 0.5]Sr[sub 0.5]TiO[sub 3] layers were considered. The domain wall related relaxation in the ferroelectric layer exhibited thermally activated behavior with a hindering barrier φapprox. 0.08 eV. The tan δ(T) of the layer peaked and there was a hump anomaly in &Vegr;[sup ′](T) at a temperature where the relaxation rate matched the frequency of measurement. © 2001 American Institute of Physics.


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