TITLE

Impact of domain wall displacements on the dielectric permittivity of epitaxial Ba[sub 0.5]Sr[sub 0.5]TiO[sub 3] films

AUTHOR(S)
Boikov, Yu. A.; Claeson, T.
PUB. DATE
September 2001
SOURCE
Applied Physics Letters;9/24/2001, Vol. 79 Issue 13
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Contributions of ferroelectric domain wall oscillations to the loss factor, tan δ, and the real part of the dielectric permittivity, &Vegr;[sup ′], of 700 nm thick Ba[sub 0.5]Sr[sub 0.5]TiO[sub 3] layers were considered. The domain wall related relaxation in the ferroelectric layer exhibited thermally activated behavior with a hindering barrier φapprox. 0.08 eV. The tan δ(T) of the layer peaked and there was a hump anomaly in &Vegr;[sup ′](T) at a temperature where the relaxation rate matched the frequency of measurement. © 2001 American Institute of Physics.
ACCESSION #
5193881

 

Related Articles

  • Effect of Low-Angle Boundaries on the Dielectric Properties of Epitaxial Ba[sub 0.8]Sr[sub 0.2]TiO[sub 3] Films. Gol’tsman, B. M.; Boıkov, Yu. A.; Danilov, V. A. // Physics of the Solid State;May2001, Vol. 43 Issue 5, p908 

    The effect of low-angle boundaries on the dielectric properties of epitaxial Ba[sub 0.8]Sr[sub 0.2]TiO[sub 3] films is studied by comparing films differing in crystalline-block size. It is found that the permittivity diminishes considerably when the block sizes are reduced. The maximum of the...

  • Thin dielectric films: Uncorrelated breakdown of integrated circuits. Alam, Muhammad A.; Smith, R. Kent; Weir, Bonnie E.; Silverman, Paul J. // Nature;11/28/2002, Vol. 420 Issue 6914, p378 

    In thick dielectrics, electrical breakdown is caused by the generation of spatially and temporally correlated defects that are produced — as in lightning — by feedback between defect formation and local stress. New defects are created in the vicinity of existing defects, leading to...

  • Post-radiation-induced soft breakdown conduction properties as a function of temperature. Cester, Andrea; Paccagnella, Alessandro; Sun˜e´, Jordi; Miranda, Enrique // Applied Physics Letters;8/27/2001, Vol. 79 Issue 9, p1336 

    When a thin oxide is subjected to heavy ion irradiation, a large leakage current similar to the soft breakdown can be produced. In this work, we have studied the radiation soft breakdown (RSB) after 257 MeV Ag and I irradiation by using a quantum point contact (QPC) model, which also applies to...

  • Vapor–liquid–solid growth and narrow-band ultraviolet photoluminescence of well-aligned GeO2 nanowire arrays with controllable aspect ratios. Jie Yu; Heqing Yang; Ruyu Shi; Lihui Zhang; Hua Zhao; Xuewen Wang // Applied Physics A: Materials Science & Processing;Aug2010, Vol. 100 Issue 2, p493 

    GeO2 nanowire arrays have been fabricated by thermal evaporation of Ge powder in air via a vapor–liquid–solid mechanism with Au as a catalyst. The GeO2 nanowires are single crystalline with a hexagonal structure and have a controllable aspect ratio in the range of 23–167....

  • High-density effects due to interaction of self-trapped exciton with (Ba, 5p) core hole in... Terekhin, M.A.; Svechnikov, N. Yu. // Low Temperature Physics;Apr97, Vol. 23 Issue 4, p349 

    Investigates the effect of vacuum ultraviolet undulator excitation intensity on the emission shape and decay time of barium fluoride crystal at low temperature. Explanation of findings in terms of quenching of Auger-free luminescence by self-trapped exciton via Forster mechanism energy transfer.

  • Characteristics of dielectric layers grown on Ge by low temperature vacuum ultraviolet-assisted... Craciun, Valentin; Boyd, Ian W.; Hutton, Bernie; Williams, David // Applied Physics Letters;8/30/1999, Vol. 75 Issue 9, p1261 

    Investigates the growth of thin dielectric layers on germanium samples by photoassisted oxidation with vacuum ultraviolet radiation emitted by a xenon silent discharge lamp. Correlation between the thickness of the grown layers and the oxidation time and processing temperature; Presence of...

  • Uniaxial dielectric anisotropy in Ba[sub 0.5]Sr[sub 0.5]TiO[sub 3] films studied by evanescent-probe microscopy. Wang, Y. G.; Reeves, M. E.; Kim, W. J.; Horwitz, J. S.; Rachford, F. J. // Applied Physics Letters;6/11/2001, Vol. 78 Issue 24, p3872 

    The dielectric permittivity, tunability (Δε/ε), and loss tangent of Ba[sub 1-x]Sr[sub x]TiO[sub 3] (BST) films grown by pulsed-laser deposition are studied by near-field microwave microscopy. Based on theoretical simulations, a method is developed to measure the uniaxial dielectric...

  • Slow capacitance relaxation in (BaSr)TiO[sub 3] thin films due to the oxygen vacancy redistribution. Boikov, Yu. A.; Goltsman, B. M.; Yarmarkin, V. K.; Lemanov, V. V. // Applied Physics Letters;6/11/2001, Vol. 78 Issue 24, p3866 

    Capacitance relaxation in Ba[sub 0.8]Sr[sub 0.2]TiO[sub 3] thin film structures has been investigated. Slow decrease of the capacitance after a bias voltage switching on is explained by suppressing the film dielectric permittivity by the field of a p-n junction originated as a result of the...

  • Nanopolar reorientation in ferroelectric thin films. Hubert, C.; Levy, J.; Rivkin, T. V.; Carlson, C.; Parilla, P. A.; Perkins, J. D.; Ginley, D. S. // Applied Physics Letters;9/24/2001, Vol. 79 Issue 13 

    The influence of varying oxygen pressure P(O[sub 2]) during the growth of Ba[sub 0.4]Sr[sub 0.6]TiO[sub 3] thin films is investigated using dielectric and local optical probes. A transition from in-plane to out-of-plane ferroelectricity is observed with increasing P(O[sub 2]). Signatures of...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics