Nanopolar reorientation in ferroelectric thin films

Hubert, C.; Levy, J.; Rivkin, T. V.; Carlson, C.; Parilla, P. A.; Perkins, J. D.; Ginley, D. S.
September 2001
Applied Physics Letters;9/24/2001, Vol. 79 Issue 13
Academic Journal
The influence of varying oxygen pressure P(O[sub 2]) during the growth of Ba[sub 0.4]Sr[sub 0.6]TiO[sub 3] thin films is investigated using dielectric and local optical probes. A transition from in-plane to out-of-plane ferroelectricity is observed with increasing P(O[sub 2]). Signatures of in-plane and out-of-plane ferroelectricity are identified using dielectric response and time-resolved confocal scanning optical microscopy (TRCSOM). At the crossover pressure between in-plane and out-of-plane polarization (P[sub c]=85 mTorr), TRCSOM measurements reveal a soft, highly dispersive out-of-plane polarization that reorients in plane under modest applied electric fields. At higher deposition pressures, the out-of-plane polarization is hardened and is less dispersive at microwave frequencies, and the dielectric tuning is suppressed. Nanopolar reorientation is believed to be responsible for the marked increase in dielectric tuning at P(O[sub 2])=P[sub c]. © 2001 American Institute of Physics.


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