TITLE

Electroluminescence from silicon nanocrystals in Si/CaF[sub 2] superlattices

AUTHOR(S)
Ioannou-Sougleridis, V.; Nassiopoulou, A. G.; Ouisse, T.; Bassani, F.; Arnaud d’Avitaya, F.
PUB. DATE
September 2001
SOURCE
Applied Physics Letters;9/24/2001, Vol. 79 Issue 13
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Electroluminescence (EL) from silicon nanocrystals in Si/CaF[sub 2] superlattices grown by molecular-beam epitaxy at room temperature was investigated and compared with that obtained from silicon nanocrystals in Si/SiO[sub 2] superlattices. EL spectra exhibited current-tunability, similar to that observed in silicon nanocrystals in SiO[sub 2], which was attributed to three main effects: (a) Auger quenching of photoluminescence, which occurs when more than one electron-hole pair is present in the same nanocrystal and which quenches luminescence from relatively larger nanocrystals, (b) size-dependent carrier injection, and (c) the effect of the applied field, when this one is significantly high. In the case of Si/CaF[sub 2] superlattices, this last factor did not apply, so the two other factors are mainly at the origin of the effect. © 2001 American Institute of Physics.
ACCESSION #
5193862

 

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