Electroluminescence from silicon nanocrystals in Si/CaF[sub 2] superlattices

Ioannou-Sougleridis, V.; Nassiopoulou, A. G.; Ouisse, T.; Bassani, F.; Arnaud d’Avitaya, F.
September 2001
Applied Physics Letters;9/24/2001, Vol. 79 Issue 13
Academic Journal
Electroluminescence (EL) from silicon nanocrystals in Si/CaF[sub 2] superlattices grown by molecular-beam epitaxy at room temperature was investigated and compared with that obtained from silicon nanocrystals in Si/SiO[sub 2] superlattices. EL spectra exhibited current-tunability, similar to that observed in silicon nanocrystals in SiO[sub 2], which was attributed to three main effects: (a) Auger quenching of photoluminescence, which occurs when more than one electron-hole pair is present in the same nanocrystal and which quenches luminescence from relatively larger nanocrystals, (b) size-dependent carrier injection, and (c) the effect of the applied field, when this one is significantly high. In the case of Si/CaF[sub 2] superlattices, this last factor did not apply, so the two other factors are mainly at the origin of the effect. © 2001 American Institute of Physics.


Related Articles

  • Room temperature self-organized gold nanoparticles materials for embedded electronic devices. Chen, Chun-Chi; You, Hsin-Chiang; Chang, Edward; Ko, Fu-Hsiang // Journal of Materials Science: Materials in Electronics;Jan2013, Vol. 24 Issue 1, p376 

    In this study, we synthesize two different sizes of gold nanoparticles (NPs) with uniform size distribution. A novel technique of fabricating gold NPs embedded capacitor devices utilizing chemical self-assembled gold NPs has been developed. Room temperature process and uniform size distribution...

  • Idle State. DORMER, MYK // Electronics World;Aug2015, Vol. 121 Issue 1952, p20 

    The article focuses on construction of ultra-low power devices which are green design. It mentions that in low power radio design arrangement must be made so that power section of the unit never presents a voltage to unpowered part. It states that occasionally entire integrated circuits powered...

  • Research about the Testing Methods of Varistor Tester. Fuquan Wang; Jin Huang; Kang Gao; Zhuang Ouyang; Chaosheng Liang // Advanced Materials Research;2014, Vol. 986-987, p1545 

    We had described and discussed the testing methods of varistor tester about DC reference current, varistor voltage, leakage current, voltage ratio, and provided the corresponding test data, which has proved that the methods are feasible.

  • Low-leakage current and high-breakdown voltage GaN-on-Si (111) System with an AlGaN impurity blocking layer. Ni, Yiqiang; He, Liang; Zhou, Deqiu; He, Zhiyuan; Chen, Zijun; Zheng, Yue; Yang, Fan; Shen, Zhen; Zhang, Xiaorong; He, Lei; Wu, Zhisheng; Zhang, Baijun; Liu, Yang // Journal of Materials Science: Materials in Electronics;May2016, Vol. 27 Issue 5, p5158 

    The influence of different AlGaN Impurity Blocking Layer (IBL) thickness in the GaN/Si (111) structure with GaN/AlN SLs buffer on the material and electrical properties of GaN/Si (111) system was studied in detail. It is found that the insertion of AlGaN IBL can increase the (102) FWHM and...

  • Visible electroluminescence from nanocrystallites of silicon films prepared by plasma enhanced chemical vapor deposition. Tong, Song; Liu, Xiang-na; Wang, Lu-chun; Yan, Feng; Bao, Xi-mao // Applied Physics Letters;7/29/1996, Vol. 69 Issue 5, p596 

    We have observed visible electroluminescence (EL) from silicon nanocrystallites which are embedded in a-Si:H films prepared in a plasma enhanced chemical vapor deposition system. The EL spectra are in the range of 500–850 nm with two peaks located at about 630–680 and 730 nm,...

  • Erbium electroluminescence excitation in amorphous hydrogenated silicon under thermally stimulated deep-center tunneling ionization. Gusev, O. B.; Bresler, M. S.; Zakharchenya, B. P.; Kuznetsov, A. N.; Pak, P. E.; Terukov, E. I.; Tséndin, K. D.; Yassievich, I. N. // Physics of the Solid State;Feb99, Vol. 41 Issue 2, p185 

    A study of the electroluminescence of erbium-doped, amorphous hydrogenated silicon, a-Si:H 〈Er〉, is reported. It has been found that the electroluminescence intensity at the wavelength λ = 1.54 µm corresponding to the [sup 4]I[sub 13/2]→[sup 4]I[sub 15/2] intra-4f shell...

  • Infrared and visible emission from organic electroluminescent devices based on praseodymium complex. Hong, Ziruo; Liang, Chunjun; Li, Ruigang; Zang, Faxin; Fan, Di; Li, Wenlian; Hung, L. S.; Lee, S. T. // Applied Physics Letters;9/24/2001, Vol. 79 Issue 13 

    Praseodymium(dibenzoylmethanato)[sub 3](bathophenanthroline) [Pr(DBM)[sub 3]bath] was employed as an emitting and electron transport layer, and N,N[sup ′]-diphenyl-N,N[sup ′]-bis(3-methylphenyl)-1, 1[sup ′]-biphenyl-4,4[sup ′]-diamine (TPD) as a hole transport layer in...

  • Suppression of phase separation in (AlAs)[sub 2 ML](InAs)[sub 2 ML] superlattices using Al[sub 0.48]In[sub 0.52]As monolayer insertions. Lee, S. R.; Reno, J. L.; Follstaedt, D. M. // Applied Physics Letters;5/28/2001, Vol. 78 Issue 22, p3421 

    Al[sub 0.48]In[sub 0.52]As monolayers (ML) are inserted at the binary-compound interfaces of (AlAs)[sub 2 ML](InAs)[sub 2 ML] short-period superlattices (SPSs) during growth on (001) InP. The insertion of Al[sub 0.48]In[sub 0.52]As interlayers greater than 2 ML thick tends to suppress the phase...

  • Quasisuperlattice storage: A concept of multilevel charge storage. Chang, T. C.; Yan, S. T.; Liu, P. T.; Chen, C. W.; Wu, H. H.; Sze, S. M. // Applied Physics Letters;7/12/2004, Vol. 85 Issue 2, p248 

    A concept of the quasisuperlattice storage has been demonstrated in this study. Under suitably operated voltage, two apparent states of charge storage can be distinguished. The memory effects are due to the multilevel storage in the quasisuperlattice. Also, the a-Si quantum wells provide a...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics