TITLE

Where are the High-Voltage GaN Products?

AUTHOR(S)
ALDERMAN, ARNOLD N.
PUB. DATE
June 2010
SOURCE
Power Electronics Technology;Jun2010, Vol. 36 Issue 6, p34
SOURCE TYPE
Trade Publication
DOC. TYPE
Article
ABSTRACT
The article discusses the advantages of high voltage Gallium Nitride (GaN) power switching devices. As stated, GaN devices are faster than conventional silicon carbide semiconductor devices. According to experts, GaN is most efficient, low loss, power semiconductor material available in the market today. It states that high voltage GaN devices are twice as fast compared to silicon semiconductors.
ACCESSION #
51858223

 

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