Influence of the GaN barrier thickness on the optical properties of InGaN/GaN multilayer quantum dot heterostructures

Davies, S. C.; Mowbray, D. J.; Ranalli, F.; Wang, T.
June 2010
Applied Physics Letters;6/21/2010, Vol. 96 Issue 25, p251904
Academic Journal
A study of InGaN/GaN multiple layer quantum dot (QD) structures with varying barrier thicknesses is reported. With increasing barrier thickness both a redshift in the photoluminescence (PL) peak energy and increase in the PL decay lifetime is observed. This is attributed to an increase in the size of the internal electric field and the influence on the electronic structure via the quantum confined Stark effect. Theoretical surface integral potential calculations support this interpretation. A minimum barrier thickness of 4 nm appears to be required for the formation of separate homogeneous QD layers.


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