Interplay of amorphous silicon disorder and hydrogen content with interface defects in amorphous/crystalline silicon heterojunctions

Schulze, T. F.; Beushausen, H. N.; Leendertz, C.; Dobrich, A.; Rech, B.; Korte, L.
June 2010
Applied Physics Letters;6/21/2010, Vol. 96 Issue 25, p252102
Academic Journal
We analyze the dependence of the interface defect density Dit in amorphous/crystalline silicon (a-Si:H/c-Si) heterojunctions on the microscopic properties of ultrathin (10 nm) undoped a-Si:H passivation layers. It is shown that the hydrogen bonding and network disorder, probed by infrared- and photoelectron spectroscopy, govern the initial Dit and its behavior upon a short thermal treatment at 200 °C. While the initial Dit is determined by the local and nonequilibrated interface structure, the annealed Dit is defined by the bulk a-Si:H network strain. Thus it appears that the equilibrated a-Si:H/c-Si interface does not possess unique electronic properties but is governed by the a-Si:H bulk defects.


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