TITLE

Optical properties of InGaN quantum dots in monolithic pillar microcavities

AUTHOR(S)
Sebald, K.; Seyfried, M.; Kalden, J.; Gutowski, J.; Dartsch, H.; Tessarek, C.; Aschenbrenner, T.; Figge, S.; Kruse, C.; Hommel, D.; Florian, M.; Jahnke, F.
PUB. DATE
June 2010
SOURCE
Applied Physics Letters;6/21/2010, Vol. 96 Issue 25, p251906
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The integration of InGaN quantum dots into GaN-based monolithic microcavities grown by metal-organic vapor-phase epitaxy is demonstrated. Microphotoluminescence spectra reveal distinct spectrally sharp emission lines around 2.73 eV, which can be attributed to the emission of single InGaN quantum dots. The samples are structured into airpost pillar microcavities. The longitudinal and transversal mode spectra of these cavities are in good agreement with theoretical calculations based on a vectorial transfer-matrix method. Quality factors up to Q=280 have been achieved.
ACCESSION #
51709508

 

Related Articles

  • Long-time evolution of the photoluminescence in C- and M-plane GaN/AlN quantum dots upon intense ultraviolet irradiation. Brandt, O.; Flissikowski, T.; Schaadt, D. M.; Jahn, U.; Trampert, A.; Grahn, H. T. // Applied Physics Letters;8/25/2008, Vol. 93 Issue 8, p081907 

    We compare the spontaneous emission of C- and M-plane GaN quantum dots embedded in AlN. C-plane dots are characterized by an intense emission with an exceptionally long decay time up to room temperature. In contrast, M-plane dots exhibit a much weaker emission with a very short decay time. In...

  • Growth of cubic GaN quantum dots. Schupp, T.; Meisch, T.; Neuschl, B.; Feneberg, M.; Thonke, K.; Lischka, K.; As, D. J. // AIP Conference Proceedings;11/1/2010, Vol. 1292 Issue 1, p165 

    Zinc-blende GaN quantum dots were grown on 3C-AlN(001) by two different methods in a molecular beam epitaxy system. The quantum dots in method A were fabricated by the Stranski-Krastanov growth process. The quantum dots in method B were fabricated by droplet epitaxy, a vapor-liquid-solid...

  • Two-exciton state in GaSb/GaAs type II quantum dots studied using near-field photoluminescence spectroscopy. Matsuda, K.; Nair, S. V.; Ruda, H. E.; Sugimoto, Y.; Saiki, T.; Yamaguchi, K. // Applied Physics Letters;1/1/2007, Vol. 90 Issue 1, p013101 

    The authors report on the photoluminescence spectroscopy of a single GaSb/GaAs type II quantum dot (QD) at 8 K. A sharp exciton emission with a linewidth of less than 250 μeV was observed. Two-exciton emission at the higher energy side of the exciton emission indicates that the two excitons...

  • Eu locations in Eu-doped InGaN/GaN quantum dots. Andreev, Thomas; Monroy, Eva; Gayral, Bruno; Daudin, Bruno; Nguyen Quang Liem; Hori, Yuji; Tanaka, Mitsuhiro; Oda, Osamu; Le Si Dang, Daniel // Applied Physics Letters;7/11/2005, Vol. 87 Issue 2, p021906 

    We report on the photoluminescence and photoluminescence excitation studies of Eu-doped wurtzite InGaN quantum dots (QDs) embedded in a GaN matrix grown by plasma-assisted molecular-beam epitaxy. The location of Eu3+ ions either in InGaN QDs or in the GaN spacing layer is assigned by comparing...

  • Excitonic complexes in single zinc-blende GaN/AlN quantum dots grown by droplet epitaxy. Sergent, S.; Kako, S.; Bürger, M.; Schupp, T.; As, D. J.; Arakawa, Y. // Applied Physics Letters;10/6/2014, Vol. 105 Issue 14, p1 

    We study by microphotoluminescence the optical properties of single zinc-blende GaN/AlN quantum dots grown by droplet epitaxy. We show evidences of both excitonic and multiexcitonic recombinations in individual quantum dots with radiative lifetimes shorter than 287 6 8 ps. Owing to large band...

  • Design issues of 1.55 µm emitting GaInNAs quantum dots. Tomić, Stanko // Optical & Quantum Electronics;Apr2008, Vol. 40 Issue 5/6, p307 

    We present a theoretical study of the optical properties of GaInNAs quantum dot (QD) structures, emitting at 1.55 µm wavelength. The theoretical model is based on a 10 × 10 k · p band-anti-crossing Hamiltonian, incorporating valence, conduction and nitrogen-induced bands. We have...

  • Temperature dependence of excitonic transitions in a-plane AlN epitaxial layers. Murotani, Hideaki; Kuronaka, Takahiro; Yamada, Yoichi; Taguchi, Tsunemasa; Okada, Narihito; Amano, Hiroshi // Journal of Applied Physics;Apr2009, Vol. 105 Issue 8, p083533 

    The excitonic optical properties of a-plane AlN epitaxial layers have been studied by means of temperature-dependent photoluminescence (PL) and optical reflectance (OR) spectroscopy. An exciton resonance and free-exciton luminescence were clearly observed up to room temperature in the OR and PL...

  • InGaN nanoinclusions in an AlGaN matrix. Sizov, V. S.; Tsatsul'nikov, A. F.; Lundin, V. V. // Semiconductors;Jul2008, Vol. 42 Issue 7, p788 

    GaN-based structures with InGaN quantum dots in the active region emitting in the near-ultraviolet region are studied. In this study, two types of structures, namely, with InGaN quantum dots in a GaN or AlGaN matrix, are compared. Photoluminescence spectra are obtained for both types of...

  • Quantum-dot laser with a metal-coated waveguide under continuous-wave operation at room temperature. Chien-Yao Lu; Shu-Wei Chang; Shang-Hua Yang; Shun Lien Chuang // Applied Physics Letters;12/7/2009, Vol. 95 Issue 23, p233507 

    We fabricated and characterized Fabry–Pérot quantum-dot lasers with metal-coated waveguides. Lasing action at room temperature under continuous-wave operation was observed, contrary to the belief that metal is too lossy to serve as the waveguide material at optical frequencies. We...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics