TITLE

Enhanced dielectric constant and fatigue-resistance of PbZr0.4Ti0.6O3 capacitor with magnetic intermetallic FePt top electrode

AUTHOR(S)
Liu, B. T.; Zhao, J. W.; Li, X. H.; Zhou, Y.; Bian, F.; Wang, X. Y.; Zhao, Q. X.; Wang, Y. L.; Guo, Q. L.; Wang, L. X.; Zhang, X. Y.
PUB. DATE
June 2010
SOURCE
Applied Physics Letters;6/21/2010, Vol. 96 Issue 25, p252904
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Both FePt/PbZr0.4Ti0.6O3(PZT)/Pt and Pt/PZT/Pt ferroelectric capacitors have been fabricated on Si substrates. It is found that up to 109 switching cycles, the FePt/PZT/Pt capacitor, measured at 50 kHz, with polarization decreased by 57%, is superior to the Pt/PZT/Pt capacitor by 82%, indicating that an intermetallic FePt top electrode can also improve the fatigue-resistance of a PZT capacitor. Maximum dielectric constants are 980 and 770 for PZT capacitors with FePt and Pt, respectively. This is attributed to the interface effect between PZT film and the top electrode since the interfacial capacitance of FePt/PZT is 3.5 times as large as that of Pt/PZT interface.
ACCESSION #
51709503

 

Related Articles

  • The conduction mechanism of large on/off ferroelectric diode currents in epitaxial (111) BiFeO3 thin film. Chen, Zhihui; He, Long; Zhang, Fan; Jiang, Jun; Meng, Jianwei; Zhao, Boyuan; Jiang, Anquan // Journal of Applied Physics;May2013, Vol. 113 Issue 18, p184106 

    The large ferroelectric diode current modulated by bipolar polarization in epitaxial (111) BiFeO3 thin film has been observed. With the survey of different current leakage models, it is found that the space-charge limited current dominates the conduction. For the intrinsic physical...

  • Ni–Al diffusion barrier layer for integrating ferroelectric capacitors on Si. Liu, B. T.; Cheng, C. S.; Li, F.; Ma, L.; Zhao, Q. X.; Yan, Z.; Wu, D. Q.; Li, C. R.; Wang, Y.; Li, X. H.; Zhang, X. Y. // Applied Physics Letters;6/19/2006, Vol. 88 Issue 25, p252903 

    We report on the use of amorphous Ni–Al film (a-Ni–Al) as conductive diffusion barrier layer to integrate La0.5Sr0.5CoO3/PbZr0.4Ti0.6O3/La0.5Sr0.5CoO3 capacitors on silicon. Cross-sectional observation by transmission electron microscope reveals clean and sharp interfaces without...

  • General equivalent circuit derived from capacitance and impedance measurements performed on epitaxial ferroelectric thin films. Pintilie, L.; Hrib, L.; Pasuk, I.; Ghica, C.; Iuga, A.; Pintilie, I. // Journal of Applied Physics;2014, Vol. 116 Issue 4, p044108-1 

    Voltage and frequency dependent capacitance measurements were performed on epitaxial BaTiO3 and Pb(Zr0.2Ti0.8)O3 thin films deposited on single crystal SrTiO3 substrates with (001) and (111) orientations. The measured capacitors have common bottom SrRuO3 contact and different metals as top...

  • Temperature dependence of polarization switching properties of Bi3.15Nd0.85Ti3O12 ferroelectric thin film. Zhang, Y.; Zhong, X. L.; Chen, Z. H.; Wang, J. B.; Zhou, Y. C. // Journal of Applied Physics;Jul2011, Vol. 110 Issue 1, p014102 

    The temperature dependences of the polarization switching properties of Bi3.15Nd0.85Ti3O12 (BNT) ferroelectric thin film in the range from 25 to 150°C have been investigated. With increasing temperature, the switchable polarization and switching time decrease. Meanwhile, the depolarization...

  • The charge trapping effect of metal-ferroelectric (PbZr0.53Ti0.47O3)-insulator (HfO2)-silicon capacitors. Pi-chun Juan; Yu-ping Hu; Fu-chien Chiu; Lee, Joseph Ya-min // Journal of Applied Physics;8/15/2005, Vol. 98 Issue 4, p044103 

    Metal-ferroelectric-insulator-semiconductor (MFIS) capacitors with a Pb(Zr0.53,Ti0.47)O3 ferroelectric layer and a hafnium oxide insulator layer have been fabricated and characterized. The size of the capacitance-voltage memory windows was investigated. The memory window first increases to a...

  • Thickness and dielectric constant of dead layer in Pt/(Ba[sub 0.7]Sr[sub 0.3])TiO[sub 3]/YBa[sub 2]Cu[sub 3]O[sub 7-x] capacitor. Chen, B.; Yang, H.; Zhao, L.; Miao, J.; Xu, B.; Qiu, X. G.; Zhao, B. R.; Qi, X.Y.; Duan, X. F. // Applied Physics Letters;1/26/2004, Vol. 84 Issue 4, p583 

    Pt/(Ba[sub 0.7]Sr[sub 0.3])TiO[sub 3] (BST)/YBa[sub 2]Cu[sub 3]O[sub 7-x] capacitors were prepared and investigated for the dead-layer (DL) thickness (t[sub d]) and the DL dielectric constant ([variant_greek_epsilon][sub d]). Based on the series capacitor model, the t[sub...

  • Impact of top electrode on electrical stress reliability of metal-insulator-metal capacitor with amorphous ZrTiO4 film. Yung-Hsien Wu; Chia-Chun Lin; Lun-Lun Chen; Bo-Yu Chen; Min-Lin Wu; Jia-Rong Wu // Applied Physics Letters;3/29/2010, Vol. 96 Issue 13, p133501 

    For metal-insulator-metal (MIM) capacitors with an amorphous ZrTiO4 film as the dielectric, the impact of top electrode including Ni and Al on electrical stress reliability was studied and the mechanisms to explain the electrode-dependent reliability were also proposed in this work. It has been...

  • Analytical solution for capacitance calculation of a curved patch capacitor that conforms to the curvature of a homogeneous cylindrical dielectric rod. Tianming Chen; Bowler, John R.; Bowler, Nicola // Applied Physics Letters;1/20/2014, Vol. 104 Issue 3, p032901-1 

    This Letter presents an analytical expression for the capacitance of a curved patch capacitor whose electrodes conform to the curvature of a long, homogeneous, cylindrical dielectric rod. The capacitor is composed of two infinitely long curved electrodes, symmetrically placed about a diameter of...

  • ULTRACAPS, FUEL CELLS REDEFINE POWER. Tuite, Don // Electronic Design;1/13/2005, Vol. 53 Issue 1, p75 

    This article focuses on the shrinking technology used in designing ultracapacitors. To build an ultracapacitor, designers need an electrode with enormous surface area and an electrolyte with tiny ions. Researchers solved the electrode problem in the early 1990s with a form of finely divided...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics