TITLE

Internal electric field influence on tunneling anisotropic magnetoresistance in epitaxial ferromagnet/n-GaAs junctions

AUTHOR(S)
Uemura, Tetsuya; Harada, Masanobu; Matsuda, Ken-ichi; Yamamoto, Masafumi
PUB. DATE
June 2010
SOURCE
Applied Physics Letters;6/21/2010, Vol. 96 Issue 25, p252106
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A strong voltage-dependent tunneling anisotropic magnetoresistance (TAMR) effect was observed in a fully epitaxial Co2MnSi/n-GaAs junction and a Co50Fe50/n-GaAs junction. Angular dependence of the tunnel resistance showed uniaxial-type anisotropic tunnel resistance between the [110] and [110] directions in the (001) plane. The voltage at which the TAMR effect was suppressed was close to that at which the differential conductance reached a minimum in both samples, suggesting that the strength and/or the sign of the internal electric field at the Co2MnSi/n-GaAs and Co50Fe50/n-GaAs junctions could be related to the voltage-dependent TAMR effect through spin-orbit interaction.
ACCESSION #
51709490

 

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