Modeling and simulation of uniaxial strain effects in armchair graphene nanoribbon tunneling field effect transistors

Jiahao Kang; Yu He; Jinyu Zhang; Xinxin Yu; Ximeng Guan; Zhiping Yu
June 2010
Applied Physics Letters;6/21/2010, Vol. 96 Issue 25, p252105
Academic Journal
In this paper, we perform a modeling and simulation study on strained armchair graphene nanoribbon (AGNR). Two uniaxial strain models based on a tight binding method are compared with results from first-principles calculation. Tunneling field effect transistors (TFETs) with channels made of strained AGNR of different widths are modeled and simulated by a ballistic quantum transport model based on nonequilibrium Green’s function and nonparabolic effective mass approximation. Compared with TFETs with narrow AGNR, those with strained wide AGNR can achieve better device performance.


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