TITLE

Modeling and simulation of uniaxial strain effects in armchair graphene nanoribbon tunneling field effect transistors

AUTHOR(S)
Jiahao Kang; Yu He; Jinyu Zhang; Xinxin Yu; Ximeng Guan; Zhiping Yu
PUB. DATE
June 2010
SOURCE
Applied Physics Letters;6/21/2010, Vol. 96 Issue 25, p252105
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
In this paper, we perform a modeling and simulation study on strained armchair graphene nanoribbon (AGNR). Two uniaxial strain models based on a tight binding method are compared with results from first-principles calculation. Tunneling field effect transistors (TFETs) with channels made of strained AGNR of different widths are modeled and simulated by a ballistic quantum transport model based on nonequilibrium Green’s function and nonparabolic effective mass approximation. Compared with TFETs with narrow AGNR, those with strained wide AGNR can achieve better device performance.
ACCESSION #
51709487

 

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