Determining the absorption tolerance of single chromophore photodiodes for machine vision

Jansen van Vuuren, R.; Johnstone, K. D.; Ratnasingam, S.; Barcena, H.; Deakin, P. C.; Pandey, A. K.; Burn, P. L.; Collins, S.; Samuel, I. D. W.
June 2010
Applied Physics Letters;6/21/2010, Vol. 96 Issue 25, p253303
Academic Journal
Color information is much less useful to machine vision systems than to people because the spectrum of light illuminating a scene is unknown. For scenes illuminated by daylight, color information can be made significantly more useful to machine vision systems if the scene is imaged using sensors with a specifically chosen combination of spectral responses. In this paper we show that detectors with a full width at half maximum of up to 100 nm can give good color discrimination, and that conjugated dendrimer chromophores have the spectral properties required to allow machine vision systems to confidently use color information.


Related Articles

  • Organic-based tristimuli colorimeter. Antognazza, M. R.; Scherf, U.; Monti, P.; Lanzani, G. // Applied Physics Letters;4/16/2007, Vol. 90 Issue 16, p163509 

    The authors realize three photodiodes based on organic materials, which have photoresponse curves matched to the colorimetric functions of the standard observer. Such a system of detectors is used for realizing a three-stimuli colorimeter. They report the result of measurements in different...

  • Improving the spectral response of amorphous Se photodetectors using organic semiconductors. Campbell, I. H. // Applied Physics Letters;8/8/2011, Vol. 99 Issue 6, p063303 

    We demonstrate a heterojunction amorphous Se (a-Se)/organic semiconductor photodetector that extends the long wavelength spectral response of pure a-Se devices from a cutoff of about 500 nm to 1000 nm. We show that a-Se/organic interfaces behave similarly to organic/organic interfaces in terms...

  • Low noise p-pi-n GaN ultraviolet photodetectors. Osinsky, A.; Gangopadhyay, S. // Applied Physics Letters;10/20/1997, Vol. 71 Issue 16, p2334 

    Examines the fabrication and characterization of p-pi-n gallium nitride ultraviolet detectors. Measurement of the spectral response of photodiodes; Analysis on the strong peaking of spectral response with front illumination; Identification of the noise characteristics of photodiodes.

  • Spectral response design of hydrogenated amorphous silicon p-i-n diodes for ambient light sensing. Tan, S. S.; Liu, C. Y.; Jiang, Yeu-Long; Lin, Der-Yu; Hsu, Klaus Y. J. // Applied Physics Letters;4/27/2009, Vol. 94 Issue 17, p171103 

    For the applications involving ambient light sensing, the spectral response of photodetectors is required to mimic that of human eyes and the cost must be low. This paper discusses the layer structure design of human-eye-like hydrogenated amorphous silicon (a-Si:H) p-i-n photodiodes. The...

  • Electronic and Photovoltaic Properties of p-Si/PCBM:MEH-PPV Organic-Inorganic Hybrid Photodiode. YAKUPHANOGLU, F.; FAROOQ, W. A. // Acta Physica Polonica, A.;Jun2011, Vol. 119 Issue 6, p890 

    The photovoltaic and electronic properties of p-Si/poly[2-methoxy,5-(2-ethyl-hexyloxy)-1,4-phenylenevinylene] (MEH-PPV):[6, 6]-phenyl C61-butyric acid methyl ester (PCBM) organic-inorganic device have been investigated. The current-voltage characteristic of p-Si/PCBM:MEH-PPV photodiode includes...

  • Effect of the optical excitation signal intensity on the impulse response of a metal-semiconductor-metal photodiode. Averine, S. V.; Kuznetsov, P. I.; Alkeev, N. V. // Technical Physics;Oct2009, Vol. 54 Issue 10, p1490 

    The effect of the optical excitation signal intensity on the impulse response of a photodetector based on a set of metal-semiconductor-metal (MSM) rectifier contacts is studied. The response of the detector is better at a low optical excitation signal. When the energy of an optical excitation...

  • InGaAs photomixers generate and detect terahertz radiation. Overton, Gail // Laser Focus World;Jan2006, Vol. 42 Issue 1, p22 

    The article reports that researchers from Cambridge, England have demonstrated the first all-optoelectronic continuous-wave (CW) terahertz photomixing system using indium gallium arsenide (InGaAs) photomixers. The system uses low-temperature grown InGaAs devices for both emitters and coherent...

  • One-dimensional analysis of N-on-p Pb1-xSnxSe compositionally graded heterojunction photodetectors. Elizondo, S. L.; Shi, Z. // Journal of Applied Physics;6/1/2007, Vol. 101 Issue 11, p114510 

    This work presents a theoretical investigation of the performance of N-on-p Pb1-xSnxSe heterojunction photodiodes with a linear gradient in composition. We quantify the improvement of the quantum efficiency, R0A product, and detectivity for a graded heterojunction device as compared to a basic...

  • PHOTODIODES Resonant-tunneling detector counts photons. Wallace, John // Laser Focus World;Apr2005, Vol. 41 Issue 4, p24 

    Reports that researchers at Toshiba Research Europe and the University of Cambridge have developed a quantum-dot detector which directly senses single-photon-excited carriers, allowing low-noise detection. Claim that a single-photon-produced hole in a layer of quantum dots causes a change in the...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics