TITLE

Optically pumped ultraviolet lasing from nitride nanopillars at room temperature

AUTHOR(S)
Rui Chen; Sun, H. D.; Wang, T.; Hui, K. N.; Choi, H. W.
PUB. DATE
June 2010
SOURCE
Applied Physics Letters;6/14/2010, Vol. 96 Issue 24, p241101
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A vertical cavity structure composing of an in situ grown bottom AlxGa1-xN/AlyGa1-yN distributed Bragg reflector and a top SiO2/HfO2 dielectric mirror for ultraviolet (UV) emission has been demonstrated. Close-packed nanopillars with diameters of around 500 nm have been achieved by the route of nanosphere lithography combined with inductively-coupled plasma etching. Optically-pumped UV lasing at a wavelength of 343.7 nm (3.608 eV) was observed at room temperature, with a threshold excitation density of 0.52 MW/cm2. The mechanism of the lasing action is discussed in detail. Our investigation indicates promising possibilities in nitride-based resonant cavity devices, particularly toward realizing the UV nitride-based vertical-cavity surface-emitting laser.
ACCESSION #
51526992

 

Related Articles

  • III-nitride blue and ultraviolet photonic crystal light emitting diodes. T. N.3Oder, A. A.; Kim, K. H.; Lin, J. Y.; Jiang, H. X. // Applied Physics Letters;1/26/2004, Vol. 84 Issue 4, p466 

    We present results on enhancement of 460 nm blue and 340 nm UV optical power output in III-nitride light emitting diodes (LEDs) using photonic crystals (PCs) under current injection. Triangular arrays of the PCs with diameter/periodicity of 300/700 nm were patterned using electron-beam...

  • Wavelength dependence of laser enhanced plasma etching of semiconductors. Reksten, Grace M.; Holber, W.; Osgood, R. M. // Applied Physics Letters;2/24/1986, Vol. 48 Issue 8, p551 

    Ultraviolet (350 nm) and visible (514 nm and 647 nm) laser light have been employed to enhance silicon etching and to perform in situ patterning in a plasma reactor containing CF4/O2 or NF3 reactants. The etch rate enhancement is dependent on dopant concentration and laser wavelength. This...

  • Prediction of UV spectra and UV-radiation damage in actual plasma etching processes using on-wafer monitoring technique. Jinnai, Butsurin; Fukuda, Seiichi; Ohtake, Hiroto; Samukawa, Seiji // Journal of Applied Physics;Feb2010, Vol. 107 Issue 4, p043302-1 

    UV radiation during plasma processing affects the surface of materials. Nevertheless, the interaction of UV photons with surface is not clearly understood because of the difficulty in monitoring photons during plasma processing. For this purpose, we have previously proposed an on-wafer...

  • Close-packed hemiellipsoid arrays: A photonic band gap structure patterned by nanosphere lithography. Wai Yuen Fu; Kenneth Kin-Yip Wong; H. W. Choi // Applied Physics Letters;9/28/2009, Vol. 95 Issue 13, p133125 

    A self-assembled hexagonal close-packed hemiellipsoidal photonic crystal structure was fabricated on GaN material. An ordered monolayer silica nanosphere coating served as a hard mask in an inductively coupled plasma etching process. The shape of the arrayed hemiellipsoids can be controlled by...

  • Efficient dry etching of Si with vacuum ultraviolet light and XeF2 in a buffer gas. Li, B.; Streller, U.; Krause, H.-P.; Twesten, I.; Schwentner, N. // Journal of Applied Physics;1/1/1995, Vol. 77 Issue 1, p350 

    Presents a study that described efficient dry etching of silicon with vacuum ultraviolet light and XeF[sub2] in a buffer gas. Description of the experimental setup; Effect of the dark reaction on the samples; Measurement of the wavelength dependence of the etching rate and quantum efficiency.

  • Inductively coupled plasma etching of GaN using Cl.../Ar and Cl.../N... gases. Sheu, J. K.; Su, Y. K. // Journal of Applied Physics;2/1/1999, Vol. 85 Issue 3, p1970 

    Presents information on a study which investigated inductively coupled plasma etching processes of gallium nitride. Experimental procedure; Results and discussion; Conclusions.

  • Atomic-order layer-by-layer role-share etching of silicon nitride using an electron cyclotron... Matsuura, Takashi; Honda, Yasuhiko; Murota, Junichi // Applied Physics Letters;6/6/1999, Vol. 74 Issue 23, p3573 

    Studies atomic-order layer-by-layer etching of silicon nitride using an ultraclean electron-cyclotron-resonance plasma. Surface nitrogen atoms in silicon nitride found to be removed selectively by excited hydrogen gas under well-controlled conditions; Removal of outermost silicon atoms by...

  • Low bias electron resonance plasma etching of GaN, AlN and InN. Pearton, S.J.; Abernathy, C.R. // Applied Physics Letters;4/25/1994, Vol. 64 Issue 17, p2294 

    Demonstrates the low bias electron cyclotron resonance plasma etching of gallium nitride, aluminum nitride, and indium nitride. Variation in the etching rates of chlorine/hydrogen molecule and methane/hydrogen molecule/argon; Description of the III-V nitride surfaces; Factors attributed to the...

  • High etch rates of GaN with magnetron reactive ion etching in BCl[sub 3] plasmas. McLane, G.F.; Casas, L. // Applied Physics Letters;6/12/1995, Vol. 66 Issue 24, p3328 

    Investigates the magnetron reactive ion etching of gallium nitride in boron chlorite plasmas. Correlation of etch rate and cathode bias voltage to cathode power density; Analysis of the etched surfaces by electron spectroscopy measurement; Suitability of magnetron dry etching for photonic...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics