TITLE

Distributed feedback transistor laser

AUTHOR(S)
Dixon, F.; Feng, M.; Holonyak, N.
PUB. DATE
June 2010
SOURCE
Applied Physics Letters;6/14/2010, Vol. 96 Issue 24, p241103
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Single longitudinal mode operation of an InGaP/GaAs/InGaAs quantum well heterojunction bipolar transistor laser is reported. A third order distributed feedback surface grating is fabricated in the top emitter AlGaAs confining layers using soft photocurable nanoimprint lithography. The device produces continuous wave laser operation with a peak wavelength λ=959.75 nm and threshold current IB=13 mA operating at -70 °C. For devices with cleaved ends a sidemode suppression ratio >25 dB has been achieved.
ACCESSION #
51526990

 

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