Fe diffusion in polycrystalline Cu(In,Ga)Se2 layers for thin-film solar cells

Stolwijk, N. A.; Obeidi, Sh.; Bastek, J.; Wuerz, R.; Eicke, A.
June 2010
Applied Physics Letters;6/14/2010, Vol. 96 Issue 24, p244101
Academic Journal
Diffusion of Fe in solar-grade Cu(In,Ga)Se2 (CIGSe) layers was investigated over the temperature range from 200 to 600 °C. Either natural or radioactive iron was diffused from the front-surface of CIGSe/Mo/soda lime glass samples. Penetration profiles of stable 56Fe and radioactive 59Fe were measured by secondary ion mass spectrometry (SIMS) and ion-beam sputtering in conjunction with activity counting, respectively. The Fe diffusivity can be described by the Arrhenius equation D=1.6×10-4 exp(-0.97 eV/kBT) cm2 s-1. Taking into account Fe solubility data obtained from the SIMS profiles, we provide evidence that D is representative of diffusion along grain boundaries.


Related Articles

  • Anomalous diffusion of nitrogen in SiO[sub 2] under ion bombardment. Banerjee, Indrajit; Kuzminov, Dimitry // Applied Physics Letters;3/29/1993, Vol. 62 Issue 13, p1541 

    Examines the anomalous nitrogen diffusion in silicon (Si) substrate under ion bombardment using depth profiling through secondary ion mass spectrometry. Existence of nitride layer at the Si/oxide interface; Confirmation on the absence of nitrogen tail in Si substrates; Observation of...

  • Validating mass spectrometry measurements of nuclear materials via a non-contact volume analysis method of ion sputter craters. Willingham, D.; Naes, B.; Fahey, A. // Journal of Radioanalytical & Nuclear Chemistry;Jan2015, Vol. 303 Issue 1, p655 

    A combination of secondary ion mass spectrometry, optical profilometry and a statistically-driven algorithm was used to develop a non-contact volume analysis method to validate the useful yields of nuclear materials. The volume analysis methodology was applied to ion sputter craters created in...

  • Oxygen vacancy kinetics in ferroelectric PbZr0.4Ti0.6O3. Gottschalk, S.; Hahn, H.; Flege, S.; Balogh, A. G. // Journal of Applied Physics;Dec2008, Vol. 104 Issue 11, p114106 

    Oxygen vacancy kinetics in ferroelectric PbZr0.4Ti0.6O3 were studied by 18oxygen (18O) tracer self-diffusion in epitaxial thin films as well as bulk polycrystalline samples. 18O exchange annealing was carried out at an oxygen partial pressure of 250 mbar and temperatures between 250 and 400...

  • Li Diffusion in (110) Oriented LiNbO3 Single Crystals. Rahn, J.; Dörrer, L.; Ruprecht, B.; Heitjans, P.; Schmidt, H. // Defect & Diffusion Forum;2013, Vol. 333, p33 

    Li diffusion is investigated in Li2O-deficient, (110) oriented LiNbO3 single crystals in the temperature range between 523 and 673 K by secondary ion mass spectrometry. A thin layer of ionbeam sputtered isotope enriched 6LiNbO3 was used as a tracer source, which allows one to study pure isotope...

  • An effective barrier against the interdiffusion of iron and zinc dopants in InP. Young, E. W. A.; Fontijn, G. M.; Vriezema, C. J.; Zalm, P. C. // Journal of Applied Physics;10/1/1991, Vol. 70 Issue 7, p3593 

    Presents a study which examined the diffusion of iron and zinc in indium phosphide with secondary-ion mass spectrometry. Investigation of doped metalorganic-vapor-phase-epitaxy grown layers and ion-implanted samples used in the study; Diffusion of the iron interstitials; Results of the...

  • Zinc diffusion in polycrystalline Cu(In,Ga)Se2 and single-crystal CuInSe2 layers. Bastek, J.; Stolwijk, N. A.; Wuerz, R.; Eicke, A.; Albert, J.; Sadewasser, S. // Applied Physics Letters;8/13/2012, Vol. 101 Issue 7, p074105 

    The diffusion behavior of Zn in solar-grade Cu(In,Ga)Se2 (CIGSe) is found to be similar to that in epitaxial CuInSe2 (CISe), which indicates that grain boundaries only play a minor role as segregation sites and fast-transport pathways. The diffusivity obeys the Arrhenius equation DZn = 3.8 ×...

  • Bevel Depth Profiling SIMS for Analysis of Layer Structures. Gillen, Greg; Wight, Scott; Chi, Peter; Fahey, Albert; Verkouteren, Jennifer; Windsor, Eric; Fenner, D.B. // AIP Conference Proceedings;2003, Vol. 683 Issue 1, p710 

    We are evaluating the use of bevel depth profiling Secondary Ion Mass Spectrometry (SIMS) for the characterization of layered semiconductor materials. In this procedure, a sub-degree angle bevel is cut into the analytical sample with an oxygen or cesium primary ion beam in a commercial SIMS...

  • Erbium diffusion in silicon dioxide. Lu, Ying-Wei; Julsgaard, B.; Petersen, M. Christian; Jensen, R. V. Skougaard; Pedersen, T. Garm; Pedersen, K.; Larsen, A. Nylandsted // Applied Physics Letters;10/4/2010, Vol. 97 Issue 14, p141903 

    Erbium diffusion in silicon dioxide layers prepared by magnetron sputtering, chemical vapor deposition, and thermal growth has been investigated by secondary ion mass spectrometry, and diffusion coefficients have been extracted from simulations based on Fick's second law of diffusion. Erbium...

  • Investigation of the diffusion behavior of sodium in Cu(In,Ga)Se2 layers. Laemmle, Anke; Wuerz, Roland; Schwarz, Torsten; Cojocaru-Mirédin, Oana; Choi, Pyuck-Pa; Powalla, Michael // Journal of Applied Physics;2014, Vol. 115 Issue 15, p154501-1 

    Sodium diffusion in Cu(In,Ga)Se2 (CIGS) layers was investigated over a temperature range from 157 °C to 400 °C. The diffusion profiles were measured by secondary ion mass spectrometry. Sodium ions diffused from a sodium fluoride (NaF) layer on the CIGS surface into the CIGS layer. From Na...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics