TITLE

Fe diffusion in polycrystalline Cu(In,Ga)Se2 layers for thin-film solar cells

AUTHOR(S)
Stolwijk, N. A.; Obeidi, Sh.; Bastek, J.; Wuerz, R.; Eicke, A.
PUB. DATE
June 2010
SOURCE
Applied Physics Letters;6/14/2010, Vol. 96 Issue 24, p244101
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Diffusion of Fe in solar-grade Cu(In,Ga)Se2 (CIGSe) layers was investigated over the temperature range from 200 to 600 °C. Either natural or radioactive iron was diffused from the front-surface of CIGSe/Mo/soda lime glass samples. Penetration profiles of stable 56Fe and radioactive 59Fe were measured by secondary ion mass spectrometry (SIMS) and ion-beam sputtering in conjunction with activity counting, respectively. The Fe diffusivity can be described by the Arrhenius equation D=1.6×10-4 exp(-0.97 eV/kBT) cm2 s-1. Taking into account Fe solubility data obtained from the SIMS profiles, we provide evidence that D is representative of diffusion along grain boundaries.
ACCESSION #
51526976

 

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