CdTe Schottky diodes from colloidal nanocrystals

Olson, J. D.; Rodriguez, Y. W.; Yang, L. D.; Alers, G. B.; Carter, S. A.
June 2010
Applied Physics Letters;6/14/2010, Vol. 96 Issue 24, p242103
Academic Journal
We have fabricated ultrathin photovoltaic cadmium telluride (CdTe) film solar cells from colloidal nanorod solutions with a power conversion efficiency of 5.0% and internal quantum efficiency approaching unity near the band edge. Sintering of the CdTe nanorod films was necessary to facilitate grain growth and enhanced optical absorption. By analyzing electrode dependence, capacitance-voltage, temperature dependence, and current-voltage characteristics, the device performance is shown to be dominated by the formation of a p-CdTe/Al Schottky junction. The reduced need for material and cheaper processing make this an attractive technology for solar power generation.


Related Articles

  • Improved performance of InAlN-based Schottky solar-blind photodiodes. Chen, Z. T.; Tan, S. X.; Sakai, Y.; Egawa, T. // Applied Physics Letters;5/25/2009, Vol. 94 Issue 21, p213504 

    The authors report the growth of InxAl1-xN with high crystal quality by metal organic chemical vapor deposition, the Pd/InxAl1-xN Schottky contacts with reverse current densities as low as 6.0×10-7 A/cm2 at -5 V and 2.1×10-5 A/cm2 at -10 V, and consequently significant improvement in the...

  • Effect of strain on quantum efficiency of InAlN-based solar-blind photodiodes. Chen, Z. T.; Sakai, Y.; Zhang, J. C.; Egawa, T.; Wu, J. J.; Miyake, H.; Hiramatsu, K. // Applied Physics Letters;8/24/2009, Vol. 95 Issue 8, p083504 

    A series of InxAl1-xN-based Schottky solar-blind photodiodes are fabricated on the InxAl1-xN epilayers with high and very close crystal qualities. The quantum efficiency varies from 14.5% to 68.5%. The microstructure and strain state of epilayers are investigated in detail. It is found that the...

  • Electric field dependence of quantum efficiencies of Ag/n-Si composites in the infrared at room temperature. Bates, Clayton W.; Zhang, Chichang // Journal of Applied Physics;Oct2008, Vol. 104 Issue 7, p076101 

    Room temperature quantum efficiencies of 2 μm thick Ag/n-Si composite films as a function of electric field are calculated for incident radiation wavelengths of 3, 5, 8, and 14 μm using a previously derived formula. With energies smaller than the Ag–Si Schottky barrier height, the...

  • Photoablation: Schottky barriers on patterned Si surfaces. Grebel, H.; Fang, K. J. // Journal of Applied Physics;1/1/1995, Vol. 77 Issue 1, p367 

    Investigates Schottky barriers on patterned silicon surfaces. Derivation of the patterning of the silicon surfaces; Effect of patterning on the light collection efficiency of solar cells; Factors which determine the efficiency of patterned solar cells; Use of an ultraviolet excimer laser to...

  • Collection efficiency of a-Si:H Schottky barriers: A computer study of the sensitivity to material and device parameters. McElheny, P. J.; Chatterjie, P.; Fonash, S. J. // Journal of Applied Physics;6/1/1991, Vol. 69 Issue 11, p7674 

    Presents a numerical calculation of the spectral response (SR) or collection efficiency behavior of a-silicon:hydrogen Schottky barrier detector and solar cell structures. Impact of materials property variations and device parameter variations on spectral response; Sensitivity of SR to gap...

  • Midgap states in a-Si:H and a-SiGe:H p-i-n solar cells and Schottky junctions by capacitance techniques. Hegedus, Steven S.; Fagen, E. A. // Journal of Applied Physics;6/15/1992, Vol. 71 Issue 12, p5941 

    Provides information on a study which investigated the midgap density of states in a-silicon:hydrogen and a-silicon germanium:hydrogen p-i-n solar cells and Schottky junctions by capacitance techniques. Sample fabrication and measurements; Theory of capacitance due to midgap states; Methodology.

  • A new architecture for solar cells involving a metal bridge deposited between active TiO2 particles. Saehana, Sahrul; Arifin, Pepen; Khairurrijal; Abdullah, Mikrajuddin // Journal of Applied Physics;Jun2012, Vol. 111 Issue 12, p123109 

    The efficiency of titanium dioxide (TiO2)-based film solar cells fabricated by combined spray and electroplating methods was improved by forming metal bridges in the pores between TiO2 nanoparticles. The interfaces between TiO2 nanoparticles and metal bridges formed Schottky contacts, which...

  • Current transport in p-type CdIn2Te4 Schottky diodes. Kianian, S.; Eshraghi, S. A.; Stafsudd, O. M.; Gentile, A. L. // Journal of Applied Physics;8/15/1987, Vol. 62 Issue 4, p1500 

    Presents a study which investigated the electrical transport properties of p-type CdIn[sub2]Te[sub4] Schottky diodes. Details of the experimental techniques used; Factor responsible for the behavior of reverse biased junction; Energy-band diagram proposed for p-type CdIn[sub2]Te[sub4].

  • Sintered n-CuInSe2/Au Schottky diode. Leccabue, F.; Seuret, D.; Vigil, O. // Applied Physics Letters;5/1/1985, Vol. 46 Issue 9, p853 

    Rectifying CuInSe[sub 2]/Au contacts were prepared by a vacuum evaporation of Au on n-type sintered CuInSe[sub 2] samples in order to evaluate the electro-optical properties of these devices. The low photovoltaic efficiency of the diode is due to the presence of the insulating layer, surface...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics