Influence of positive bias stress on N2O plasma improved InGaZnO thin film transistor

Chih-Tsung Tsai; Ting-Chang Chang; Shih-Ching Chen; Ikai Lo; Shu-Wei Tsao; Ming-Chin Hung; Jiun-Jye Chang; Chen-Yi Wu; Chun-Yao Huang
June 2010
Applied Physics Letters;6/14/2010, Vol. 96 Issue 24, p242105
Academic Journal
A post-treatment using N2O-plasma is applied to enhance the electrical characteristics of amorphous indium gallium zinc oxide thin film transistors. Improvements in the field-effect mobility and the subthreshold swing demonstrate that interface states were passivated after N2O-plasma treatment, and a better stability under positive gate-bias stress was obtained in addition. The degradation of mobility, resulted from bias stress, reduces from 6.1% (untreated devices) to 2.6% (N2O-plasma treated devices). Nevertheless, a strange hump characteristic occurs in transfer curve during bias stress, inferring that a parasitic transistor had been caused by the gate-induced electrical field.


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