TITLE

Influence of positive bias stress on N2O plasma improved InGaZnO thin film transistor

AUTHOR(S)
Chih-Tsung Tsai; Ting-Chang Chang; Shih-Ching Chen; Ikai Lo; Shu-Wei Tsao; Ming-Chin Hung; Jiun-Jye Chang; Chen-Yi Wu; Chun-Yao Huang
PUB. DATE
June 2010
SOURCE
Applied Physics Letters;6/14/2010, Vol. 96 Issue 24, p242105
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A post-treatment using N2O-plasma is applied to enhance the electrical characteristics of amorphous indium gallium zinc oxide thin film transistors. Improvements in the field-effect mobility and the subthreshold swing demonstrate that interface states were passivated after N2O-plasma treatment, and a better stability under positive gate-bias stress was obtained in addition. The degradation of mobility, resulted from bias stress, reduces from 6.1% (untreated devices) to 2.6% (N2O-plasma treated devices). Nevertheless, a strange hump characteristic occurs in transfer curve during bias stress, inferring that a parasitic transistor had been caused by the gate-induced electrical field.
ACCESSION #
51526970

 

Related Articles

  • PVI gate drive with fast reset. Santana, Henry E. // Electronic Design;11/04/96, Vol. 44 Issue 23, p109 

    Recommends the combination of a weak photovoltaic isolator (PVI) pull-up and a strong programmable junction transistor (PUT) pull-down to come up with a simple half-bridge field-effect transistor (FET) or IGBT driver. PUT's four-layer structure; Advantage of PUT over a P-MOSFET used as a gate...

  • Effects of amorphous semiconductor thickness on top gate staggered organic field-effect transistors. Verilhac, J. M.; Benwadih, M.; Altazin, S.; Jacob, S.; Gwoziecki, R.; Coppard, R.; Serbutoviez, C. // Applied Physics Letters;4/6/2009, Vol. 94 Issue 14, p143301 

    We have investigated the influence of the semiconductor thickness varying by almost two orders of magnitude on the transfer and output characteristics of top gate staggered organic field-effect transistors. We observe that the mobility in the saturation regime is almost constant in the thickness...

  • High performance ZnO nanorod strain driving transistor based complementary metal-oxide-semiconductor logic gates. Liu, Nishuang; Fang, Guojia; Zeng, Wei; Zhou, Hai; Long, Hao; Zou, Xiao; Liu, Yuping; Zhao, Xingzhong // Applied Physics Letters;12/13/2010, Vol. 97 Issue 24, p243504 

    ZnO nanorod strain driving transistor (SDT) with 107 scale 'on'-'off' ratio has been fabricated on Kapton substrate by a single-step hydrothermal reaction. The transistor is driven by strain due to the change in Schottky barrier height caused by piezoelectric effect as well as the change of...

  • Ambient field effects on the current-voltage characteristics of nanowire field effect transistors. Karmalkar, Shreepad; Maheswaran, K. R. K.; Gurugubelli, Vijayakumar // Applied Physics Letters;2/7/2011, Vol. 98 Issue 6, p063508 

    We investigate the effects of ambient field from the gate and drain contacts on the current-voltage characteristics of a vertical nanowire field effect transistor having a lightly doped ungated length near the drain. Such a device is suitable for high voltage (tens of volts) applications. It is...

  • Demonstration and dynamic analysis of trapping of hot electrons at gate edge model for current collapse and gate lag in GaN-based high-electron-mobility transistor including self-heating effect. Hu, W. D.; Chen, X. S.; Quan, Z. J.; Xia, C. S.; Lu, W.; Yuan, H. J. // Applied Physics Letters;12/11/2006, Vol. 89 Issue 24, p243501 

    Using a two-dimensional simulator, the authors report on demonstration of trapping of hot electrons at gate edge model in GaN-based high-electron-mobility transistors. Dynamic picture of hot electrons under gate pulse voltage is discussed in detail. Trapped charges may accumulate under punch-off...

  • RTS in Submicron MOSFETs: Lateral Field Effect and Active Trap Position. Sikula, J.; Sedlakova, V.; Chvatal, M.; Pavelka, J.; Tacano, M.; Toita, M. // AIP Conference Proceedings;4/23/2009, Vol. 1129 Issue 1, p205 

    Experiments were carried out for n-channel devices, processed in a 0.3 μm spacerless CMOS technology. The investigated devices have a gate oxide thickness of 6 nm and the effective interface area is AG = 1.5 μm2. The RTS measurements were performed for constant gate voltage, where the...

  • Enhancing photoresponse by synergy of gate and illumination in electric double layer field effect transistors fabricated on n-ZnO. Mondal, Shahnewaz; Ram Ghimire, Rishi; Raychaudhuri, A. K. // Applied Physics Letters;12/2/2013, Vol. 103 Issue 23, p231105 

    We report that photoresponse of ZnO in ultraviolet (UV) can be enhanced substantially by simultaneously applying a gate bias in an Electric Double Layer Field Effect Transistor configuration fabricated on ZnO as a channel. The effect arises from synergy between UV illumination and applied gate...

  • Bis(dithienothiophene) organic field-effect transistors with a high ON/OFF ratio. Sirringhaus, H.; Friend, R.H. // Applied Physics Letters;12/29/1997, Vol. 71 Issue 26, p3871 

    Synthesizes the bis(dithienothiophene) (BDT) organic field-effect transistors with high on/off ratios. Comparison of the turn-on characteristics of BDT with that of amorphous silicon thin film resistors; Structure of polycrystalline BDT films; Characteristics of the optical absorption spectra...

  • MODELING OF BUILT-IN POTENTIAL VARIATIONS OF CYLINDRICAL SURROUNDING GATE (CSG) MOSFETS. Gupta, Santosh Kumar; Baishya, S. // International Journal of VLSI Design & Communication Systems;Oct2012, Vol. 3 Issue 5, p67 

    Due to aggressive scaling of MOSFETs the parasitic fringing field plays a major role in deciding its characteristics. These fringing fields are now not negligible and should be taken into account for deriving the MOSFET models. Due to this fringing field effect there are some charges induced in...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics