Phase control of magnetic state of graphite thin films by electric field

Otani, Minoru; Takagi, Yoshiteru; Koshino, Mikito; Okada, Susumu
June 2010
Applied Physics Letters;6/14/2010, Vol. 96 Issue 24, p242504
Academic Journal
Based on first-principle total-energy calculations, we have found that by applying an external electric field it is possible to control the magnetic state of graphite thin film with the rhombohedral stacking arrangement. When exposed to a moderate electric field normal to the film, the surface of a thin film of rhombohedral graphite undergoes a magnetic phase transition from the antiferromagnetic state to the ferromagnetic state. The polarized electron spin is primarily distributed in the bottommost layer of the film, which forms the interface with the negative electrode. The amount of polarized electron spin is calculated to be 0.067 μB/nm2. The ferromagnetic ordering with the characteristic distribution of the polarized electron spin opens the possibility of using graphite thin films in electronic devices with spin degree of freedom.


Related Articles

  • Transient response during resistance switching in Ag/Pr0.7Ca0.3MnO3/Pt thin films. Odagawa, Akihiro; Kanno, Tsutomu; Adachi, Hideaki // Journal of Applied Physics;1/1/2006, Vol. 99 Issue 1, p016101 

    The transient response during resistance switching in Ag/Pr0.7Ca0.3MnO3/Pt thin films is investigated by measurements using pulsed voltage biases. Semiconducting Pr0.7Ca0.3MnO3 (PCMO) films sandwiched by Ag and Pt electrodes show nonvolatile resistance switching (two orders of magnitude) as a...

  • Anomalous temperature dependence of training effect in specular spin valve using ultrathin Cr2O3-nano-oxide layer with magnetoelectric effect. Sawada, Kazuya; Shimomura, Naoki; Doi, Masaaki; Sahashi, Masashi // Journal of Applied Physics;May2010, Vol. 107 Issue 9, p09D713-1 

    Exchange bias from antiferromagnetic (AFM) oxides with a magnetoelectric (ME) effect has been studied for controlling ferromagnetic (FM) magnetizations by an applying electric field. However, thick ME oxides are needed for realizing the electrically controlled exchange biasing. Therefore, in...

  • Approach to optimize the pinning effect of a NiMn layer with reduced thickness under a much shortened annealing process. Dai, B.; Cai, J. W.; Lai, W. Y.; Shen, F.; Zhang, Z.; Yu, G. H. // Applied Physics Letters;5/26/2003, Vol. 82 Issue 21, p3722 

    We investigated the magnetic properties of sputtered Ni[sub 0.8]Fe[sub 0.2]/Ni[sub 1-x]Mn[sub x] (0.43 ≤ x ≤ 0.70) bilayers and found that an antiferromagnetic equiatomic NiMn layer could be formed through Mn diffusion with reduced thickness and a much shortened annealing time if the...

  • Interaction effects in disordered multilayers. Antel, W. J.; Laidler, H.; Marrows, C. H. // Journal of Applied Physics;6/1/2001, Vol. 89 Issue 11, p7071 

    Interaction effects in a series of disordered Co/Cu multilayers have been studied at low applied fields. The samples had Cu thickness t[sub Cu] chosen to give antiferromagnetic (AF) and ferromagnetic (FM) coupling. From measured remanence curves, both switching field distributions and ΔM...

  • Epitaxial strain and antiferromagnetism in Heusler Fe2VSi thin films. Fukatani, N.; Ueda, K.; Asano, H. // Journal of Applied Physics;Apr2011, Vol. 109 Issue 7, p073911 

    The effects of biaxial strain on the electrical and magnetic properties of an antiferromagnetic Heusler compound Fe2VSi were systematically investigated. A series of epitaxial Fe2VSi thin films on MgAl2O4 and MgO substrates were fabricated with different tensile strains by varying the...

  • Interface ferromagnetism in oxide superlattices of CaMnO[sub 3]/CaRuO[sub 3]. Takahashi, K. S.; Kawasaki, M.; Tokura, Y. // Applied Physics Letters;8/27/2001, Vol. 79 Issue 9, p1324 

    Oxide superlattices composed of antiferromagnetic insulator layers of CaMnO[sub 3] (10 unit cells) and paramagnetic metal layers of CaRuO[sub 3] (N unit cells) were fabricated on LaAlO[sub 3] substrates by pulsed-laser deposition. All the superlattices show ferromagnetic transitions at an almost...

  • Electronic structures of silicon nanoribbons. Yi Ding; Jun Ni // Applied Physics Letters;8/24/2009, Vol. 95 Issue 8, p083115 

    Using first principles calculations, we investigate the electronic properties of silicon nanoribbons (SiNRs). We find that the armchair SiNRs can be metals or semiconductors depending on width. For the zigzag SiNRs, the antiferromagnetic semiconducting state is the most stable one. Under...

  • Interface influence on the high-field conduction phenomena of a thin dielectric liquid layer. Brosseau, Christian // Journal of Applied Physics;1/15/1991, Vol. 69 Issue 2, p891 

    Reports on an experimental work on the conduction phenomena of a thin dielectric liquid layer at high-electric field for several interfacial situations. Role of ionic conduction in the thin film liquid layer between the impregnated polymer film and the electrode; Review of high-field ionic...

  • Improved dielectric and electrical properties of (Ba,Sr)TiO3 thin films using Pt/LaNiO3 as the top-electrode material. Gao, Y. H.; Sun, J. L.; Ma, J. H.; Meng, X. J.; Chu, J. H. // Applied Physics A: Materials Science & Processing;Jun2008, Vol. 91 Issue 3, p541 

    (Ba,Sr)TiO3 (BST) capacitors grown on a LaNiO3 (LNO) bottom electrode, with Pt (80 nm), LNO (100 nm), and double-layer Pt/LNO (80/10 nm) top electrodes have been investigated. It was found that the dielectric behavior is improved by a decrease of the electrical properties for the BST capacitor...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics