TITLE

Photocurrent characteristics of two-dimensional-electron-gas-based AlGaN/GaN metal-semiconductor-metal photodetectors

AUTHOR(S)
Huang, Y.; Chen, D. J.; Lu, H.; Shi, H. B.; Han, P.; Zhang, R.; Zheng, Y. D.
PUB. DATE
June 2010
SOURCE
Applied Physics Letters;6/14/2010, Vol. 96 Issue 24, p243503
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Photocurrent response characteristics of two-dimensional-electron-gas-based AlGaN/GaN metal-semiconductor-metal (MSM) photodetectors were investigated by changing the frequency of incident light signals. At low chopper frequencies, the contribution to the photocurrent is mainly from the GaN bulk layer at 5 V bias, as expected. With increasing chopper frequency, a peak response at 361 nm wavelength becomes more and more pronounced and dominates gradually the photocurrent spectrum, indicating that this peak response has a much less frequency dependence and a faster response rate than the spectral response from the GaN bulk layer. This peak response is attributed to the contribution of photoelectrons generated in the two-dimensional electron gas (2DEG) channel according to simulation results of electrical field distribution and analysis of carrier transport in the 2DEG-based AlGaN/GaN heterostructure. This characteristic makes the 2DEG-based MSM photodetectors a large potential to develop high-speed ultraviolet optoelectronic integrated devices with AlGaN/GaN high electron mobility transistors.
ACCESSION #
51526963

 

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