Photocurrent characteristics of two-dimensional-electron-gas-based AlGaN/GaN metal-semiconductor-metal photodetectors

Huang, Y.; Chen, D. J.; Lu, H.; Shi, H. B.; Han, P.; Zhang, R.; Zheng, Y. D.
June 2010
Applied Physics Letters;6/14/2010, Vol. 96 Issue 24, p243503
Academic Journal
Photocurrent response characteristics of two-dimensional-electron-gas-based AlGaN/GaN metal-semiconductor-metal (MSM) photodetectors were investigated by changing the frequency of incident light signals. At low chopper frequencies, the contribution to the photocurrent is mainly from the GaN bulk layer at 5 V bias, as expected. With increasing chopper frequency, a peak response at 361 nm wavelength becomes more and more pronounced and dominates gradually the photocurrent spectrum, indicating that this peak response has a much less frequency dependence and a faster response rate than the spectral response from the GaN bulk layer. This peak response is attributed to the contribution of photoelectrons generated in the two-dimensional electron gas (2DEG) channel according to simulation results of electrical field distribution and analysis of carrier transport in the 2DEG-based AlGaN/GaN heterostructure. This characteristic makes the 2DEG-based MSM photodetectors a large potential to develop high-speed ultraviolet optoelectronic integrated devices with AlGaN/GaN high electron mobility transistors.


Related Articles

  • Closed-form electric-field profile model for AlGaAs/GaAs heterostructures. Castro, Francisco; Nabet, Bahram; Chen, Xiying // Journal of Applied Physics;7/1/2002, Vol. 92 Issue 1, p218 

    We propose a closed-form analytical model to describe the electric-field profile inside the GaAs layer of a modulation-doped AlGaAs/GaAs heterostructure. Derived from an accurate two-dimensional electron gas density expression, this model serves as a tool in the simulation of field effects on...

  • Analysis of direct current performance on N-polar GaN-based high-electron-mobility transistors for next-generation optoelectronic devices. Liu, Cong; Wang, Chong; Chen, Xiaoyao; Yang, Yu // Optical & Quantum Electronics;Aug2015, Vol. 47 Issue 8, p2479 

    Exhibiting extremely high electric polarization, N-polar Group III-nitrides heterostructure has been widely used on high-electron-mobility transistors (HEMTs) and terahertz photodetectors in recent years. In this paper, we numerically investigated an N-polar GaN/AlGaN/GaN HEMT device in which...

  • Evidence of hot electrons generated from an AlN/GaN high electron mobility transistor. Tripathy, Suvranta K.; Xu, Guibao; Mu, Xiaodong; Ding, Yujie J.; Wang, Kejia; Cao, Yu; Jena, Debdeep; Khurgin, Jacob B. // Applied Physics Letters;1/7/2008, Vol. 92 Issue 1, p013513 

    We have observed that the temperature of the electrons drifting under a relatively high electric field in an AlN/GaN-based high-electron-mobility transistor is significantly higher than the lattice temperature (i.e., the hot electrons are generated). These hot electrons are produced through the...

  • Optical electromodulation of surface-intrinsic-doped structures. Urias, Jesus; Balderas, Raul // Journal of Applied Physics;11/15/1997, Vol. 82 Issue 10, p5072 

    Focuses on optical electro-modulation of the electric field within the intrinsic layer of surface-intrinsic-doped-structures by means of a chopped pump beam and in the presence of a constant probe team. Analysis of the time resolved PR signals produced by the mechanism driven by the majority...

  • Room-temperature determination of two-dimensional electron gas concentration and mobility in.... Schacham, S.E.; Mena, R.A.; Haugland, E.J.; Alterovitz, S.A. // Applied Physics Letters;3/15/1993, Vol. 62 Issue 11, p1283 

    Determines the room-temperature two-dimensional electron gas (2DEG) concentration and mobility in heterostructures. Use of the simultaneous fits of the longitudinal and transverse voltages; Efficacy of the room-temperature data in estimating the 2DEG concentration.

  • A Franz-Keldysh model for photoreflectance from GaAs/GaAlAs heterojunction structures. Batchelor, R. A.; Hamnett, A. // Journal of Applied Physics;3/1/1992, Vol. 71 Issue 5, p2414 

    Describes a Franz-Keldysh model for the simulation of photoreflectance spectra from GaAs/GaAIAs heterojunctions. Function of photoreflectance; Interpretation of heterostructure photoreflectance; Photoreflectance of a high-electron-mobility transistor.

  • Wave function deformation and mobility of a two-dimensional electron gas in a backgated.... Kurobe, A.; Frost, J.E.F.; Grimshaw, M.P.; Ritchie, D.A.; Jones, G.A.C.; Pepper, M. // Applied Physics Letters;5/17/1993, Vol. 62 Issue 20, p2522 

    Examines the transport properties of two-dimensional electron gas in GaAs-AlGaAs heterostructure as a function of deformation and mobility. Comparison of experimental results to theoretical calculations on shape of wave function; Increase of mobility; Observation of steeper carrier density...

  • The effect of the two-dimensional gas degeneracy on the I-V characteristics of the modulation-doped field-effect transistor. Grinberg, A. A. // Journal of Applied Physics;8/1/1986, Vol. 60 Issue 3, p1097 

    Presents a study which demonstrated a modulation-doped field-effect transistor model for long-channel devices. Background on modulation-doped heterostructures; Basic definition; Determination of the channel current; Conclusion.

  • High-temperature effects of AlGaN/GaN high-electron-mobility transistors on sapphire and semi-insulating SiC substrates. Arulkumaran, S.; Egawa, T.; Ishikawa, H.; Jimbo, T. // Applied Physics Letters;3/25/2002, Vol. 80 Issue 12, p2186 

    The high-electron-mobility transistors (HEMTs) have been demonstrated on both sapphire and semi-insulating (SI) SiC substrates, and the dc characteristics of the fabricated devices were examined at temperatures ranging from 25 to 500 °C. The decrease in drain current and the transconductance...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics