Ambipolar ballistic electron emission microscopy studies of gate-field modified Schottky barriers

Che, Y. L.; Pelz, J. P.
June 2010
Applied Physics Letters;6/14/2010, Vol. 96 Issue 24, p242106
Academic Journal
Four-terminal ambipolar ballistic electron emission microscopy studies are conducted on Au/Si and Cu/Si Schottky contacts fabricated on back-gated silicon-on-insulator wafers, allowing the electric field to be varied so that both electron (n)- and hole (p)-Schottky barrier heights can be measured at the same sample location. While the individual n- and p-Schottky barrier heights varied by more than 200 meV between the Au/Si and Cu/Si contacts, for a given sample they sum to within 15 meV of the same value, indicating that the individual variations are due to variations in a local surface dipole as compared with tip effects or variations in local composition.


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