Cu/p-Si Schottky barrier-based near infrared photodetector integrated with a silicon-on-insulator waveguide

Casalino, M.; Sirleto, L.; Iodice, M.; Saffioti, N.; Gioffrè, M.; Rendina, I.; Coppola, G.
June 2010
Applied Physics Letters;6/14/2010, Vol. 96 Issue 24, p241112
Academic Journal
In this letter, a near infrared all-silicon (all-Si) photodetector integrated into a silicon-on-insulator waveguide is demonstrated. The device is based on the internal photoemission effect through a metal/Si Schottky junction placed transversally to the optical field confined into the waveguide. The technological steps utilized to fabricate the device allow an efficiently monolithic integration with complementary metal-oxide semiconductor compatible structures. Preliminary results show a responsivity of 0.08 mA/W at 1550 nm with a reverse bias of 1 V and an efficient behavior both in C and L band. Finally, an estimation of bandwidth for GHz range is deduced.


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