TITLE

Resistive switching behaviors of ZnO nanorod layers

AUTHOR(S)
Wen-Yuan Chang; Chin-An Lin; Jr-Hau He; Tai-Bor Wu
PUB. DATE
June 2010
SOURCE
Applied Physics Letters;6/14/2010, Vol. 96 Issue 24, p242109
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have fabricated vertically aligned ZnO nanorod layers (NRLs) on indium tin oxide (ITO) electrodes using a hydrothermal process. The Pt/ZnO NRL/ITO capacitor exhibits bipolar resistive switching behavior. The resistive switching behavior may be related to the oxygen vacancies and/or zinc interstitials confined on the surface of the ZnO NRs, giving rise to the formation of straight and extensible conducting filaments along each vertically aligned ZnO NR. Superior stability in resistive switching characteristics was also observed, demonstrating that ZnO NRLs have the potential for next-generation nonvolatile memory applications.
ACCESSION #
51526941

 

Related Articles

  • Band alignment between Ta2O5 and metals for resistive random access memory electrodes engineering. Zhuo, V. Y.-Q.; Jiang, Y.; Li, M. H.; Chua, E. K.; Zhang, Z.; Pan, J. S.; Zhao, R.; Shi, L. P.; Chong, T. C.; Robertson, J. // Applied Physics Letters;2/11/2013, Vol. 102 Issue 6, p062106 

    Band alignment of resistive random access memory (RRAM) switching material Ta2O5 and different metal electrode materials was examined using high-resolution X-ray photoelectron spectroscopy. Schottky and hole barrier heights at the interface between electrode and Ta2O5 were obtained, where the...

  • See-thru phones on their way.  // New Scientist;12/20/2008, Vol. 199 Issue 2687, p23 

    The article on the world's first transparent flash memory chip. A new memory chip has been made by engineers at Korea's Advanced Institute of Science and Technology in Taejon-si, Korea, which records data by changing the resistance of a metal oxide film, a technology known as resistive RAM or...

  • Influence of surface null potential on nonvolatile bistable resistive switching memory behavior of dilutely aluminum doped ZnO thin film. Shirolkar, Mandar M.; Hao, Changshan; Yin, Shiliu; Li, Ming; Wang, Haiqian // Applied Physics Letters;6/17/2013, Vol. 102 Issue 24, p243501 

    We report a correlation between surface null potential and bistable resistive switching effect in dilutely Al-doped ZnO nearly transparent thin film. The nearly symmetrical bistable resistive switching was observed at low operating potential (±1 V) with good repeatability and stability,...

  • Total ionizing dose effect of γ-ray radiation on the switching characteristics and filament stability of HfOx resistive random access memory. Runchen Fang; Yago Gonzalez Velo; Wenhao Chen; Holbert, Keith E.; Kozicki, Michael N.; Barnaby, Hugh; Shimeng Yu // Applied Physics Letters;5/5/2014, Vol. 104 Issue 18, p1 

    The total ionizing dose (TID) effect of gamma-ray (γ-ray) irradiation on HfOx based resistive random access memory was investigated by electrical and material characterizations. The memory states can sustain TID level ~5.2 Mrad (HfO2) without significant change in the functionality or the...

  • Effect of post deposition anneal on the characteristics of HfO2/InP metal-oxide-semiconductor capacitors. Galatage, R. V.; Dong, H.; Zhernokletov, D. M.; Brennan, B.; Hinkle, C. L.; Wallace, R. M.; Vogel, E. M. // Applied Physics Letters;10/24/2011, Vol. 99 Issue 17, p172901 

    The interface trap density (Dit) and bonding of the HfO2/InP interface is investigated. The energy distribution of interface states extracted using capacitance-voltage measurements show a peak near midgap in InP and a tail, which extends into the InP conduction band. Both the Dit peak and the...

  • Role of ultra thin pseudomorphic InP layer to improve the high-k dielectric/GaAs interface in realizing metal-oxide-semiconductor capacitor. Kundu, Souvik; Halder, Nripendra N.; Biswas, D.; Banerji, P.; Shripathi, T.; Chakraborty, S. // Journal of Applied Physics;Aug2012, Vol. 112 Issue 3, p034514 

    In this article, we report GaAs metal-oxide-semiconductor (MOS) capacitors with a metal organic chemical vapor deposited ultrathin (1.5 nm) pseudomorphic InP interface passivation layer (IPL) and a thin (5 nm) ZrO2 high-k dielectric. Reduction of the surface states on InP passivated GaAs...

  • Non-volatile memory with self-assembled ferrocene charge trapping layer. Zhu, Hao; Hacker, Christina A.; Pookpanratana, Sujitra J.; Richter, Curt A.; Yuan, Hui; Li, Haitao; Kirillov, Oleg; Ioannou, Dimitris E.; Li, Qiliang // Applied Physics Letters;7/29/2013, Vol. 103 Issue 5, p053102 

    A metal/oxide/molecule/oxide/Si capacitor structure containing redox-active ferrocene molecules has been fabricated for non-volatile memory application. Cyclic voltammetry and X-ray photoelectron spectroscopy were used to measure the molecules in the structure, showing that the molecules attach...

  • Investigation of HfO2 high-k dielectrics electronic structure on SiO2/Si substrate by x-ray photoelectron spectroscopy. Duan, T. L.; Yu, H. Y.; Wu, L.; Wang, Z. R.; Foo, Y. L.; Pan, J. S. // Applied Physics Letters;7/4/2011, Vol. 99 Issue 1, p012902 

    In this Letter, x-ray photoelectron spectroscopy (XPS) was used to investigate electronic structures of HfO2 with various thicknesses on SiO2/Si substrate prepared by atomic layer deposition with post deposition annealing of 600 °C, which is compatible with a gate last process in the...

  • Effect of MgO/Co interface and Co/MgO interface on the spin dependent transport in perpendicular Co/Pt multilayers. Zhang, J. Y.; Yang, G.; Wang, S. G.; Liu, Y. W.; Zhao, Z. D.; Wu, Z. L.; Zhang, S. L.; Chen, X.; Feng, C.; Yu, G. H. // Journal of Applied Physics;2014, Vol. 116 Issue 16, p163905-1 

    Effect of the metal/oxide interface on spin-dependent transport properties in perpendicular [Co/Pt]3 multilayers was investigated. The saturation Hall resistivity (ρxy) is significantly increased by 45% with 1.4 nm thick CoO layer inserted at the top Co/MgO interface; whereas it is increased...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics