The role of anomalous Hall effect in diluted magnetic semiconductors and oxides

Hsu, H. S.; Lin, C. P.; Sun, S. J.; Chou, H.
June 2010
Applied Physics Letters;6/14/2010, Vol. 96 Issue 24, p242507
Academic Journal
A serious debate has arisen in the development of spintronics regarding contradictory findings on whether or not anomalous Hall effect (AHE) represents the spin polarization nature of carriers in diluted magnetic semiconductors (DMS) and oxides (DMO). Based on our results and on the common AHE characteristics of others reports, here we suggest that only those AHEs for DMSs or DMO which match quantitatively with the magnetic hysteresis loop and which follow the 1.6 scaling relation represent the spin polarization nature of carriers. However, these criteria cannot be used to determine the percentage of magnetic precipitation or of the spin polarized current.


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