Study of piezoresistance under unixial stress for technologically relevant III-V semiconductors using wafer bending experiments

Nainani, Aneesh; Yum, Jung; Barnett, Joel; Hill, Richard; Goel, Niti; Huang, Jeff; Majhi, Prashant; Jammy, Raj; Saraswat, Krishna C.
June 2010
Applied Physics Letters;6/14/2010, Vol. 96 Issue 24, p242110
Academic Journal
In this work, effect of uniaxial stress is studied by wafer bending on p/n-channel candidates for III-V based complimentary logic. p-GaSb has 2× higher piezoresistance (π) coefficient than p-In0.53Ga0.47As, which combined with high hole-mobility in GaSb makes it an attractive candidate for III-V p-metal-oxide-semiconductor-field-effect-transistor. Limitation on maximum stress introduced by wafer bending is improved when the III-V channel is grown epitaxially on silicon. 250 MPa of stress is achieved by wafer bending on III-V channel grown on silicon substrate, which is 5× higher than maximum stress achieved on III-V substrate.


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