TITLE

Transport properties of the electron gas in ZnO/MgZnO heterostructures

AUTHOR(S)
Gold, A.
PUB. DATE
June 2010
SOURCE
Applied Physics Letters;6/14/2010, Vol. 96 Issue 24, p242111
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We analyze experimental results for the mobility of the two-dimensional electron gas as realized in ZnO/MgZnO heterostructures. For zero temperature we calculate the mobility as function of the electron density for charged-impurity and for interface-roughness scattering. Multiple scattering effects, leading to a metal-insulator transition, are taken into account. The results of our calculation are in good agreement with experimental results. The numbers obtained for the parameters of interface-roughness scattering and charged-impurity scattering are reasonable. We argue that the electron gas in this heterostructure might be spin-polarized.
ACCESSION #
51526928

 

Related Articles

  • Layer-by-layer growth of ZnO epilayer on Al[sub 2]O[sub 3](0001) by using a MgO buffer layer. Chen, Yefan; Ko, Hang-Ju; Hong, Soon-Ku; Yao, Takafumi // Applied Physics Letters;1/31/2000, Vol. 76 Issue 5, p559 

    By introducing a thin MgO buffer, layer-by-layer growth of ZnO epilayers on Al[sub 2]O[sub 3](0001) substrates is achieved by plasma-assisted molecular beam epitaxy. The MgO buffer is very effective on the improvement of surface morphology during the initial growth stage, which eventually leads...

  • Effects of electron interference on temperature dependent transport properties of two dimensional electron gas at MgZnO/ZnO interfaces. Das, Amit K.; Misra, P.; Ajimsha, R. S.; Joshi, M. P.; Kukreja, L. M. // Applied Physics Letters;9/7/2015, Vol. 107 Issue 10, p1 

    We report the effects of electron interference on temperature dependent transport properties of two dimensional electron gas (2DEG) confined at the interface in polycrystalline MgZnO/ZnO heterostructures grown by pulsed laser deposition on c-alumina substrates. On increasing Mg concentration in...

  • High-mobility electronic transport in ZnO thin films. Tsukazaki, A.; Ohtomo, A.; Kawasaki, M. // Applied Physics Letters;4/10/2006, Vol. 88 Issue 15, p152106 

    A systematic study of electronic transport properties was carried out for ZnO thin films grown on high-temperature annealed buffer layers of semi-insulating Mg0.15Zn0.85O. As functions of growth temperature and oxygen pressure during laser molecular-beam epitaxy growth, there can be seen optimum...

  • Al Ohmic Contacts to HCl-Treated MgxZn1-xO. Sheng, H.; Saraf, G.; Emanetoglu, N. W.; Hill, D. H.; Lu, Y. // Journal of Electronic Materials;Jun2005, Vol. 34 Issue 6, p754 

    The Al nonalloyed ohmic contacts were fabricated on MgxZn1-xO (0 = x = 0.2) thin films. HCl surface treatment significantly reduced the specific contact resistances to value around 10-4 O cm�. X-ray photoelectron spectroscopy (XPS) analysis revealed that the HCl treatment increased the...

  • Intersubband transitions in ZnO multiple quantum wells. Belmoubarik, M.; Ohtani, K.; Ohno, H. // Applied Physics Letters;5/12/2008, Vol. 92 Issue 19, p192502 

    Intersubband transitions in ZnO/MgZnO multiple quantum wells (MQWs) are investigated by a photocurrent spectroscopy. Photocurrent peaks are observed in the energy range from 300 to 400 meV and shifted to higher energy by reducing the ZnO well thickness. Polarization-resolved photocurrent spectra...

  • Optical transitions and multiphonon Raman scattering of Cu doped ZnO and MgZnO ceramics. Huso, Jesse; Morrison, John L.; Mitchell, James; Casey, Erin; Hoeck, Heather; Walker, Chris; Bergman, Leah; Hlaing Oo, W. M.; McCluskey, M. D. // Applied Physics Letters;2/9/2009, Vol. 94 Issue 6, pN.PAG 

    Cu doped ZnO and MgZnO ceramics were created via a process of cold pressing and annealing, and their optical properties and phonon dynamics were studied. It was found that the ceramics exhibit infrared absorption peak energies at 5783 and 5822 cm-1, indicative of intraband transitions in a...

  • Formation and stability of rocksalt ZnO nanocrystals in MgO. Eijt, S. W. H.; de Roode, J.; Schut, H.; Kooi, B. J.; De Hosson, J. Th. M. // Applied Physics Letters;11/12/2007, Vol. 91 Issue 20, p201906 

    Coimplantation of Zn and O ions into a single crystalline MgO and subsequent thermal annealing were applied in the synthesis of ZnO nanocrystals. Electron microscopy showed that rocksalt instead of wurtzite ZnO stabilizes for relatively large nanocrystals up to ∼15 nm, resulting from its...

  • Nonlinear Optical Rectification of Confined Exciton in a ZnO/ZnMgO Strained Quantum Dot. Minimala, N. S.; Peter, A. John // Journal of Nano- & Electronic Physics;2012, Vol. 4 Issue 4, p04004-1 

    Heavy hole exciton binding energies as functions of dot radius and the Mg alloy content in a ZnO/MgxZn1-xO quantum dot are investigated. The effects of strain, including the hydrostatic and the biaxial strain, and the internal electric field, due to spontaneous and piezoelectric polarization are...

  • Demonstration of a ZnO/MgZnO-based one-dimensional photonic crystal multiquantum well laser. Hofstetter, Daniel; Théron, Ricardo; El-Shaer, Abdel-Hamid; Bakin, Andrey; Waag, Andreas // Applied Physics Letters;9/8/2008, Vol. 93 Issue 10, p101109 

    A ZnO/MgZnO-based one-dimensional photonic crystal multiquantum well laser operating at an emission wavelength of 360.7 nm is demonstrated. The photonic crystal providing optical feedback was fabricated in the form of parallel grooves with a period of 277.3 nm and a depth of 100 nm in a Si3N4...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics