Orientation-controlled epitaxy of A[sub 2]CuO[sub 3] (A: Sr, Ca) films with large optical nonlinearity

Manako, T.; Okimoto, Y.; Izumi, M.; Shinomori, S.; Kawasaki, M.; Kishida, H.; Okamoto, H.; Fukumura, T.; Ohtani, M.; Tokura, Y.
September 2001
Applied Physics Letters;9/17/2001, Vol. 79 Issue 12, p1754
Academic Journal
The one-dimensional Cu–O chains responsible for the large optical nonlinearity in Sr[sub 2]CuO[sub 3] (SCO) and Ca[sub 2]CuO[sub 3] (CCO) are aligned in one direction in films grown on LaSrAlO[sub 4] (LSAO) (1 0 0) substrates by using pulsed laser deposition. The CCO films deposited directly on lattice matched LSAO substrates have a single orientation with high crystallinity, while the SCO films include small portions of misoriented domains. Using a simple model of lattice mismatch, we developed a Sr[sub 2]TiO[sub 4] buffer layer in order to grow orientation-controlled SCO films with both high crystallinity and a sharp optical absorption edge. This technique will be a key to fabricating ultrafast all-optical switches with a waveguide structure. © 2001 American Institute of Physics.


Related Articles

  • Oxidation kinetics in SrTiO[sub 3] homoepitaxy on SrTiO[sub 3](001). Zhu, X. D.; Si, Weidong; Xi, X. X.; Jiang, Qidu // Applied Physics Letters;1/22/2001, Vol. 78 Issue 4, p460 

    Using an oblique-incidence optical reflectivity difference technique, we investigated kinetic processes in SrTiO[sub 3] homoepitaxy on SrTiO[sub 3](001) under pulsed-laser deposition conditions. Depending upon growth temperature and oxygen ambient pressure, we found that the oxidation of an...

  • Oxidation kinetics in La[sub 0.67]Ba[sub 0.33]MnO[sub 3-delta] epitaxy on SrTiO[sub 3] (001)... Zhu, X.D.; Weidong Si; Xi, X.X.; Qi Li; Jiang, Q.D.; Medici, M.G. // Applied Physics Letters;6/6/1999, Vol. 74 Issue 23, p3540 

    Studies the kinetics of La[sub 0.67]Ba[sub 0.33]MnO[sub 3-delta] epitaxy on SrTiO[sub 3](001) during pulsed-laser deposition. Use of an oblique-incidence optical reflectance difference technique in the study; Rate limitation of the epitaxy by the oxidation of the as-deposited monolayer.

  • Epitaxial Y[sub 2]O[sub 3] films grown on Si(111) by pulsed-laser ablation. Hunter, M. E.; Reed, M. J.; El-Masry, N. A.; Roberts, J. C.; Bedair, S. M. // Applied Physics Letters;4/3/2000, Vol. 76 Issue 14 

    Y[sub 2]O[sub 3] has a relatively high dielectric constant (13-17) leading to several potential applications. In this work, pulsed-laser deposition was used to grow epitaxial Y[sub 2]O[sub 3] films on Si(111) substrates. Structural characterization indicated two-dimensional growth without the...

  • Pulsed laser deposition and characterization of epitaxial Cu/TiN/Si(100) heterostructures. Vispute, R.D.; Chowdhury, R. // Applied Physics Letters;11/14/1994, Vol. 65 Issue 20, p2565 

    Describes the growth of epitaxial copper/titanium nitride/silicon(100) heterostructures by pulsed laser deposition technique. Structural characterization using three-axis x-ray diffraction and transmission electron microscopy; Mechanism of growth in large lattice mismatch system; Implication...

  • Top-interface-controlled fatigue of epitaxial Pb(Zr[sub 0.52]Ti[sub 0.48])O[sub 3] ferroelectric thin films on La[sub 0.7]Sr[sub 0.3]MnO[sub 3] electrodes. Wu, Wenbin; Wenbin Wu; Wong, K. H.; Wong, K.H.; Choy, C. L.; Choy, C.L.; Zhang, Y. H.; Zhang, Y.H. // Applied Physics Letters;11/20/2000, Vol. 77 Issue 21 

    Epitaxial Pb(Zr[sub 0.52]Ti[sub 0.48])O[sub 3]/La[sub 0.7]Sr[sub 0.3]MnO[sub 3](PZT/LSMO) and LSMO/PZT/LSMO heterostructures have been grown on LaAlO[sub 3](001) substrates by pulsed-laser deposition. Three types of ferroelectric capacitors, i.e., Pt/PZT/LSMO (A), LSMO/PZT/LSMO (B), and...

  • Growth of epitaxial PrO2 thin films on hydrogen terminated Si (111) by pulsed laser deposition. Fork, D. K.; Fenner, D. B.; Geballe, T. H. // Journal of Applied Physics;10/15/1990, Vol. 68 Issue 8, p4316 

    Presents information on a study which discussed the growth of the PrO[sub2] epitaxial oxide on silicon(111) by pulsed laser deposition. Description of the laser deposition technique; Characterization of the films by x-ray diffraction; Observation on in-plane film texturing.

  • Growth of epitaxial NdNiO[sub3] and integration with Si(100). Tiwari, Ashutosh; Narayan, J.; Jin, C.; Kvit, A. // Applied Physics Letters;2/25/2002, Vol. 80 Issue 8, p1337 

    Examines the epitaxial NdNiO[sub 3] films in silicon(100) substrate under ambient oxygen pressure using a pulsed-laser deposition method. Integration of NdNio[sub3] with silicon(100); Domain matching epitaxy of TiN on silicon(100); Detection of metal-insulator transition in epitaxial NdNiO[sub 3].

  • Epitaxy of Fe3O4on Si(001) by pulsed laser deposition using a TiN/MgO buffer layer. Reisinger, D.; Schonecke, M.; Brenninger, T.; Opel, M.; Erb, A.; Alff, L.; Gross, R. // Journal of Applied Physics;8/1/2003, Vol. 94 Issue 3, p1857 

    Epitaxy of oxide materials on silicon (Si) substrates is of great interest for future functional devices using the large variety of physical properties of the oxides as ferroelectricity, ferromagnetism, or superconductivity. Recently, materials with high spin polarization of the charge carriers...

  • Growth and giant magnetoresistance properties of La-deficient La[sub x]MnO[sub 3]-sigma.... Gupta, A.; McGuire, T.R. // Applied Physics Letters;12/4/1995, Vol. 67 Issue 23, p3494 

    Examines the growth and magnetoresistance properties of epitaxial La[sub x]MnO[sub 3]-sigma by pulsed laser deposition. Demonstration of a ferromagnetic transition; Observation of a sharp drop in resistivity and negative magnetoresistance; Heat treatment of the films in O[sub 2]; Attainment of...


Read the Article

Courtesy of

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics