Comparison of negative-ion and positive-ion-assisted etching of silicon

Kanakasabapathy, Sivananda K.; Khater, Marwan H.; Overzet, Lawrence J.
September 2001
Applied Physics Letters;9/17/2001, Vol. 79 Issue 12, p1769
Academic Journal
Relatively electron-free, positive- and negative-ion (ion–ion) plasmas have been achieved in the afterglow of pulsed-power Cl[sub 2] discharges. The application of a pulsed dc bias phase locked to the source power modulation and exclusive to the ion–ion plasma, allows selective bombardment by positive (Cl[sub 2][sup +]) or negative (Cl[sup -]) ions onto a silicon substrate. This allows an equitable comparison of etching by equal energy ions of both polarities. We find that at 50 eV, Cl[sub 2][sup +] etches twice as fast as Cl[sup -]. © 2001 American Institute of Physics.


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