TITLE

Electronic structure of noncrystalline transition metal silicate and aluminate alloys

AUTHOR(S)
Lucovsky, G.; Rayner, G. B.; Kang, D.; Appel, G.; Johnson, R. S.; Zhang, Y.; Sayers, D. E.; Ade, H.; Whitten, J. L.
PUB. DATE
September 2001
SOURCE
Applied Physics Letters;9/17/2001, Vol. 79 Issue 12, p1775
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A localized molecular orbital description (LMO) for the electronic states of transition metal (TM) noncrystalline silicate and aluminate alloys establishes that the lowest conduction band states are derived from d states of TM atoms. The relative energies of these states are in agreement with the LMO approach, and have been measured by x-ray absorption spectroscopy for ZrO[sub 2]–SiO[sub 2] alloys, and deduced from an interpretation of capacitance–voltage and current–voltage data for capacitors with Al[sub 2]O[sub 3]–Ta[sub 2]O[sub 5] alloy dielectrics. The LMO model yields a scaling relationship for band offset energies providing a guideline for selection of gate dielectrics for advanced Si devices. © 2001 American Institute of Physics.
ACCESSION #
5145228

 

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