TITLE

Structural effects of the thermal treatment on a GaInNAs/GaAs superlattice

AUTHOR(S)
Largeau, L.; Bondoux, C.; Patriarche, G.; Asplund, C.; Fujioka, A.; Salomonsson, F.; Hammar, M.
PUB. DATE
September 2001
SOURCE
Applied Physics Letters;9/17/2001, Vol. 79 Issue 12, p1795
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have studied structural changes that occur during annealing of GaInNAs/GaAs multiple quantum wells grown by metalorganic vapor-phase epitaxy (MOVPE). Different thermal treatments led to an improved room-temperature photoluminescence (PL) intensity, but also to room-temperature PL peak splitting. This splitting is related to the appearance of compositional clustering as displayed by transmission electron microscopy (TEM). In addition to this, interfacial layers on each side of the wells have also been observed by TEM and their composition is discussed on the basis of high resolution x-ray diffraction studies. It is suggested that the interface layers are indium deficient, but enriched in nitrogen, degrading the optical quantum well performance and indicating a need for improved switching sequences in the MOVPE growth. © 2001 American Institute of Physics.
ACCESSION #
5145221

 

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