Influence of Si growth temperature for embedding β-FeSi[sub 2] and resultant strain in β-FeSi[sub 2] on light emission from p-Si/β-FeSi[sub 2] particles/n-Si light-emitting diodes

Suemasu, T.; Negishi, Y.; Takakura, K.; Hasegawa, F.; Chikyow, T.
September 2001
Applied Physics Letters;9/17/2001, Vol. 79 Issue 12, p1804
Academic Journal
We have fabricated Si/β-FeSi[sub 2] particles/Si structures by reactive deposition epitaxy for β-FeSi[sub 2] and molecular-beam epitaxy (MBE) for Si. It was found that the photoluminescence (PL) intensity of β-FeSi[sub 2] strongly depended on MBE-Si growth temperature for embedding β-FeSi[sub 2] in Si. Room temperature 1.6 μm electroluminescence was realized from a Si-based light-emitting diode by embedding the β-FeSi[sub 2] active region with Si grown at 500 °C. Observation with transmission electron microscopy revealed that the a axis of β-FeSi[sub 2] from which PL was observed was about 9% longer than that of β-FeSi[sub 2] without PL or of bulk β-FeSi[sub 2]. © 2001 American Institute of Physics.


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