Ohmic contact formation mechanism of Ni on n-type 4H–SiC

Han, Sang Youn; Kim, Ki Hong; Kim, Jong Kyu; Jang, Ho Won; Lee, Kwang Ho; Kim, Nam-Kyun; Kim, Eun Dong; Lee, Jong-Lam
September 2001
Applied Physics Letters;9/17/2001, Vol. 79 Issue 12, p1816
Academic Journal
Ohmic contact formation mechanism of Ni on n-type 4H–SiC is proposed by comparing the electrical properties with microstructural change. The ohmic behavior was observed at temperatures higher than 900 °C, but Ni[sub 2]Si phase, as formerly reported to be responsible for ohmic contact, was formed after annealing at 600 °C. The higher work function of Ni[sub 2]Si than Ni and the observation of graphite phase on the surface of Ni silicide after annealing at 950 °C support that a number of carbon vacancies were produced below the contact, playing a key role in forming an ohmic contact through the reduction of effective Schottky barrier height for the transport of electrons. © 2001 American Institute of Physics.


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