Low-resistance and thermally stable ohmic contact on p-type GaN using Pd/Ni metallization

Jang, Ho Won; Kim, Ki Hong; Kim, Jong Kyu; Hwang, Soon-Won; Yang, Jung Ja; Lee, Kang Jae; Son, Sung-Jin; Lee, Jong-Lam
September 2001
Applied Physics Letters;9/17/2001, Vol. 79 Issue 12, p1822
Academic Journal
We report a low-resistance thermally stable ohmic contact on p-type GaN using a promising contact scheme of Pd/Ni. Specific contact resistance as low as 5.7×10[sup -5] Ω cm[sup 2] was obtained from the Pd (30 Å)/Ni (70 Å) contact annealed at 500 °C under an oxidizing ambient. NiO that formed at the surface prevented Pd atoms from outdiffusing, promoting the formation of Pd gallides, Ga[sub 2]Pd[sub 5] and Ga[sub 5]Pd. This reaction produces Ga vacancies below the contact, leading to enhancement of the thermal stability as well as reduction of the contact resistivity. © 2001 American Institute of Physics.


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