Back-channel-type scanning charge pumping method for characterization of interface traps in silicon-on-insulator wafer

Yoshida, Haruhiko; Sasakura, Hiroshi; Yabuuchi, Tomoyuki; Takami, Toshinori; Uchihashi, Takayuki; Kishino, Seigo
September 2001
Applied Physics Letters;9/17/2001, Vol. 79 Issue 12, p1825
Academic Journal
A scanning charge pumping method using a back channel is proposed for the characterization of interface traps in a silicon-on-insulator (SOI) wafer. In this method, a contactless gate electrode is used instead of the permanent gate electrode of normal metal–oxide–semiconductor transistors, allowing the interface trap density of SOI wafers to be mapped. A preliminary study is performed using a sample device with many permanent gate electrodes fabricated on an oxidized SOI wafer. The results demonstrate that the back-channel-type scanning charge pumping method is effective in characterizing interface trap density and is potentially applicable to SOI wafer inspection. © 2001 American Institute of Physics.


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