TITLE

Modified Airy function method for modeling of direct tunneling current in metal–oxide–semiconductor structures

AUTHOR(S)
Wang, Jing; Ma, Yutao; Tian, Lilin; Li, Zhijian
PUB. DATE
September 2001
SOURCE
Applied Physics Letters;9/17/2001, Vol. 79 Issue 12, p1831
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Using a modified Airy function (MAF) to solve the Schro¨dinger equation in the whole metal–oxide–semiconductor structure, a fully quantum-mechanical model of direct tunneling current from an inverted p-Si substrate through ultrathin oxides is presented. The effects of tunneling on the electrostatic potential and the distribution of electrons are also included when self-consistently solving the Schro¨dinger and Poisson equations in silicon. Due to the semianalytical nature of the MAF method, the model has high efficiency. Model results are compared with experimental data and show excellent agreement. Moreover, an approximately linear relationship between the logarithm of the direct tunneling current and oxide thickness is found out. © 2001 American Institute of Physics.
ACCESSION #
5145209

 

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