TITLE

Metal drift behavior in low dielectric constant organosiloxane polymer

AUTHOR(S)
Mallikarjunan, A.; Murarka, S. P.; Lu, T.-M.
PUB. DATE
September 2001
SOURCE
Applied Physics Letters;9/17/2001, Vol. 79 Issue 12, p1855
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Metal drift into a low dielectric constant (low κ) hybrid organosiloxane (OS) polymer has been investigated using metal/OS/SiO[sub 2]/Si capacitors. Compared to Cu, Al gate metal capacitors showed larger flatband voltage shifts in the capacitance–voltage (C–V) curves upon bias temperature stressing (BTS). To elucidate the mechanism and source of this bias instability, further BTS experiments were performed with gate metals tantalum and platinum. It is suggested that all these metals, except Pt, drift into the dielectric and the extent of drift appears to be directly related to the metal’s tendency to oxidize. The calculations, assuming singly ionized metal species, show that the charges/cm[sup 2] entering the dielectric fall in the order Pt
ACCESSION #
5145200

 

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