TITLE

Formation of coupled quantum dots in single-wall carbon nanotubes

AUTHOR(S)
Ishibashi, K.; Suzuki, M.; Ida, T.; Aoyagi, Y.
PUB. DATE
September 2001
SOURCE
Applied Physics Letters;9/17/2001, Vol. 79 Issue 12, p1864
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The triple-barrier coupled quantum dots have been fabricated in individual single-wall carbon nanotubes by depositing a narrow SiO[sub 2] layer in between metallic source–drain contacts. The current–voltage characteristics at 4.2 K with different gate voltages before the SiO[sub 2] deposition have indicated the formation of a single quantum dot. After the SiO[sub 2] deposition, the irregular Coulomb diamonds and the negative differential conductance have been observed, which suggests the formation of coupled quantum dots. © 2001 American Institute of Physics.
ACCESSION #
5145197

 

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