TITLE

Enhanced luminescence from the disordered quantum-wire superlattice

AUTHOR(S)
Sasaki, Akio; Okanishi, Ryohei; Liu, Xinquan; Wang, Xuelun; Ogura, Mutsuo
PUB. DATE
September 2001
SOURCE
Applied Physics Letters;9/17/2001, Vol. 79 Issue 12, p1870
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The disordered quantum-wire superlattice (d-QWRSL), in which individual layer thicknesses are randomly disordered, is grown. Luminescence characteristics are investigated with changing temperature and compared with those of a conventionally ordered quantum-wire superlattice (o-QWRSL). We observe the luminescence capability enhanced by disordering the atomic arrangement. The luminescence intensity of the d-QWRSL decays gently with increasing temperature and then becomes stronger above ∼100 K as compared with that of the o-QWRSL. © 2001 American Institute of Physics.
ACCESSION #
5145195

 

Related Articles

  • Type-II InAs/InAsSb strained-layer-superlattice negative luminescence devices. Pullin, M. J.; Hardaway, H. R. // Applied Physics Letters;11/29/1999, Vol. 75 Issue 22, p3437 

    Studies type II InAs/InAsSb strained-layer-superlattice negative luminescence devices. Negative luminescence operation of p-n diode devices; Spectral peak and luminescence efficiency.

  • Influence of disorder on luminescence from pseudorandomized strained Si1-xGex/Si superlattices. Miyake, Y.; Shiraki, Y.; Fukatsu, S. // Applied Physics Letters;12/23/1996, Vol. 69 Issue 26, p3972 

    Carrier localization in a disordered potential was studied in type-I strained Si1-xGex/Si superlattices (SLs) where layer widths have been artificially pseudorandomized. The photoluminescence (PL) intensity under a transverse bias voltage varies monotonically and exhibits a folded increase as...

  • Direct probing of electron movement in superlattices by subpicosecond luminescence. Deveaud, B.; Clerot, F.; Chomette, A.; Lambert, B.; Auvray, P.; Gauneau, M.; Regreny, A. // Applied Physics Letters;10/21/1991, Vol. 59 Issue 17, p2168 

    Examines the direct probing of electron movement in superlattices by subpicosecond luminescence. Imposition of quasi electric field to the carriers; Importance of electron transfer for satellite valleys; Determination of line shape using the drift-diffusion model.

  • Theoretical calculation of the miniband-to-acceptor magnetoluminescence of semiconductor superlattices. Latge´, A.; Porras-Montenegro, N.; de Dios-Leyva, M.; Oliveira, L. E. // Journal of Applied Physics;5/1/1997, Vol. 81 Issue 9, p6234 

    The acceptor-related photoluminescence of a GaAs-(Ga,A1)As superlattice, under the influence of a magnetic field applied parallel to the interfaces, is theoretically studied following a variational procedure within the effective-mass approximation. Electron and hole magnetic Landau levels and...

  • Stabilization and luminescent properties of GaP/GaAs0.4P0.6 strained-layer superlattice electrodes. Johnson, Phelps B.; Ellis, Arthur B.; Biefeld, R. M.; Ginley, D. S. // Applied Physics Letters;10/15/1985, Vol. 47 Issue 8, p877 

    Photoelectrochemical cells based on n-GaP/n-GaAs0.4P0.6 strained-layer superlattice (SLS) electrodes have been stabilized against photocorrosion in an aqueous (di) telluride electrolyte, and show monochromatic optical to electrical energy conversion efficiencies of a few percent. The...

  • Luminescence decay in disordered low-dimensional semiconductors. Chen, X.; Henderson, B.; O'Donnell, K.P. // Applied Physics Letters;5/25/1992, Vol. 60 Issue 21, p2672 

    Examines the comparison between luminescence decay and time-resolved porous silicon and disordered CdSe-ZnSe superlattice. Description of the luminescence; Anomalous luminescence decays of disordered II-VI superlattices; Recombination of free carriers in random low dimensional solids.

  • Luminescence studies of a Si/SiO[sub 2] superlattice. Averboukh, B.; Huber, R.; Cheah, K. W.; Shen, Y. R.; Qin, G. G.; Ma, Z. C.; Zong, W. H. // Journal of Applied Physics;10/1/2002, Vol. 92 Issue 7, p3564 

    Photoluminescence and electroluminescence from a Si/SiO[sub 2] superlattice have been measured. They show similar characteristics and exhibit an inhomogeneously broadened photoluminescence band peaked at 2.06 eV. The excitation spectrum indicates that excitations occur in the Si layers. The...

  • Quantum-confined subband transitions of a GaAs sawtooth doping superlattice. Ullrich, B.; Zhang, C.; Klitzing, K. v. // Applied Physics Letters;3/20/1989, Vol. 54 Issue 12, p1133 

    In this letter we present for the first time the observation of quantum-confined transitions of a short-period sawtooth doping superlattice in photocurrent and luminescence. The luminescence was investigated with different laser intensities. Due to the nature of the band modulation of sawtooth...

  • Spectroscopic characterization of band discontinuity in free-standing CdZnS/ZnS strained layer superlattices. Yokogawa, T.; Ishikawa, T.; Merz, J. L.; Taguchi, T. // Journal of Applied Physics;2/15/1994, Vol. 75 Issue 4, p2189 

    Presents the results of luminescence studies for free-standing cadmium-zinc-sulfur/zinc-sulfur layer superlattices. Band discontinuity; Growth of the compounds by metal-organic vapor phase epitaxy; Photoluminescence characteristics.

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics