Selective growth of InP on focused-ion-beam-modified GaAs surface by hydride vapor phase epitaxy

Sun, Y. T.; Rodrı´guez Messmer, E.; Lourdudoss, S.; Ahopelto, J.; Rennon, S.; Reithmaier, J. P.; Forchel, A.
September 2001
Applied Physics Letters;9/17/2001, Vol. 79 Issue 12, p1885
Academic Journal
The growth of InP islands on a planar focused-ion-beam (FIB)-modified (001) GaAs substrate was investigated in a hydride vapor phase epitaxy system. InP grew selectively on the FIB-implanted lines, forming continuous stripes, whereas isolated islands were observed outside the implanted area. The impact of the III/V ratio, crystallographic orientation of implanted lines, and implantation dose was explored. The choice of suitable growth conditions makes it possible to obtain continuous InP wires aligned in all possible directions. The results of this work could be used for the fabrication of future optoelectronic integrated circuits, which would include nanoscale structures, e.g., quantum-wire optical devices with GaAs electronic circuits. © 2001 American Institute of Physics.


Related Articles

  • Epitaxial planarization of patterned yttria-stabilized zirconia substrates for multilayer.... Chang, Bertha P.; Sonnenberg, Neville // Applied Physics Letters;8/21/1995, Vol. 67 Issue 8, p1148 

    Examines the epitaxial planarization of ytrria-stabilized zirconia substrates through ion beam assisted deposition (IBAD). Details on the electrical properties of Ba[sub 2]YCu[sub 3]O[sub 7-x] films deposited on zirconia substrates; Mechanism of IBAD planarization; Application of planarization...

  • Channeled ion beam synthesis of heteroepitaxial Nd[sub 0.32]Y[sub 0.68]Si[sub 1.7] layers. Wu, M. F.; Vantomme, A.; Hogg, S.; Pattyn, H.; Langouche, G. // Applied Physics Letters;5/11/1998, Vol. 72 Issue 19 

    Heteroepitaxial Nd[sub 0.32]Y[sub 0.68]Si[sub 1.7] layers with good crystalline quality (χ[sub min] of Nd and Y is 3.5% and 4.3%, respectively) have been prepared by high dose 65 keV Y and 80 keV Nd implantation into a Si(111) substrate using channeled ion beam synthesis. Although the...

  • Simulations of layer-by-layer sputtering during epitaxy. Chason, E.; Bedrossian, P.; Houston, J.E.; Tsao, J.Y.; Dodson, B.W.; Picraux, S.T. // Applied Physics Letters;12/30/1991, Vol. 59 Issue 27, p3533 

    Examines the simulations of simultaneous sequential ion bombardment and epitaxial growth. Device use in analyzing the interaction of ion-induced and growth-induced defects on semiconductor surfaces; Device use in silicon measurement; Independent mechanisms for the modification of the surface by...

  • Epitaxial growth of ZrSi2 on silicon with an ion beam mixing assisted scheme. Cheng, H. C.; Chen, L. J. // Applied Physics Letters;3/15/1985, Vol. 46 Issue 6, p562 

    Ion beam mixing has been demonstrated to play a critical role in growing refractory silicide epitaxially on silicon for the first time. Epitaxial ZrSi2 has been successfully grown on (111) and (001) Si. Best epitaxy was obtained in samples irradiated by As+ with an ion range close to the...

  • Ion beam enhanced epitaxial growth of Ge (001). Chason, E.; Bedrossian, P.; Horn, K. M.; Tsao, J. Y.; Picraux, S. T. // Applied Physics Letters;10/22/1990, Vol. 57 Issue 17, p1793 

    An enhancement in surface smoothness during molecular beam epitaxial growth of Ge on Ge (001) by 200 eV Xe ion bombardment has been measured with reflection high-energy electron diffraction. We show that the steady-state surface is smoother during simultaneous ion bombardment and growth at 400...

  • Epitaxy enhancement of beta-FeSi[sub 2] grown by ion beam assisted deposition. Terrasi, A.; Ravesi, S.; Grimaldi, M.G.; Spinella, C. // Applied Physics Letters;4/26/1993, Vol. 62 Issue 17, p2102 

    Evaluates the beta-FeSi[sub 2] epitaxy enhancement through ion beam assisted deposition. Formation of polycrystalline FeSi; Acquisition of the beta-FeSi[sub 2] epitaxy; Analysis of samples through transmission electron microscopy and Rutherford backscattering spectroscopy.

  • Effects of ion-beam mixing on the epitaxial growth of MoSi2 on (111)Si. Cheng, J. Y.; Cheng, H. C.; Chen, L. J. // Journal of Applied Physics;11/1/1987, Vol. 62 Issue 9, p3722 

    Provides information on a study which examined the effects of ion-beam mixing on the epitaxial growth of MoSi[sub2] on (111)Si. Result of ion-beam mixing; Defects that are considered beneficial to the growth of MoSi[sub2] epitaxy on silicon; Cause of the ineffectiveness of the ion-beam mixing...

  • Low-temperature ion-induced epitaxial growth of alpha-FeSi[sub 2] and cubic FeSi[sub 2] in Si. Lin, X.W.; Behar, M. // Applied Physics Letters;7/5/1993, Vol. 63 Issue 1, p105 

    Examines the ion-beam-induced epitaxial crystallization of amorphous silicon implanted with iron. Detection of layered structure in ion-irradiated specimen; Relationship of the phase distribution with iron concentration profile; Formation of alpha-iron silicon[sub 2] around the peak of iron...

  • Concentration dependence and interfacial instabilities during ion beam annealing of arsenic-doped silicon. Priolo, Francesco; Rimini, Emanuele; Spinella, Corrado; Ferla, Giuseppe // Applied Physics Letters;1/1/1990, Vol. 56 Issue 1, p24 

    Ion beam induced epitaxy of amorphous Si layers onto <100> substrates has been investigated by varying the As concentration. At As concentrations below 4×1018/cm3 no rate effect is observed. In the intermediate regime, between 4×1018/cm3 and 2×1021/cm3, the growth rate increases...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics