TITLE

Subband electron properties of highly doped InAlAs/InGaAs metamorphic high-electron-mobility transistors on GaAs substrates

AUTHOR(S)
Jiang, C. P.; Huang, Z. M.; Guo, S. L.; Chu, J. H.; Cui, L. J.; Zeng, Y. P.; Zhu, Z. P.; Wang, B. Q.
PUB. DATE
September 2001
SOURCE
Applied Physics Letters;9/17/2001, Vol. 79 Issue 12, p1909
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A Shubnikov–de Haas (SdH) oscillation measurement was performed on highly doped InAlAs/InGaAs metamorphic high-electron-mobility transistors on GaAs substrates at a temperature of 1.4 K. By analyzing the experimental data using fast Fourier transform, the electron densities and mobilities of more than one subband are obtained, and an obvious double-peak structure appears at high magnetic field in the Fourier spectrum. In comparing the results of SdH measurements, Hall measurements, and theoretical calculation, we found that this double-peak structure arises from spin splitting of the first-excited subband (i=1). Very close mobilities of 5859 and 5827 cm[sup 2]/V s are deduced from this double-peak structure. The sum of the carrier concentration of all the subbands in the quantum well is only 3.95×10[sup 12] cm[sup -2] due to incomplete transfer of the electrons from the Si δ-doped layer to the well. © 2001 American Institute of Physics.
ACCESSION #
5145182

 

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