TITLE

Correlation of band edge native defect state evolution to bulk mobility changes in ZnO thin films

AUTHOR(S)
Hyungtak Seo; Chan-Jun Park; Young-Je Cho; Young-Bae Kim; Duck-Kyun Choi
PUB. DATE
June 2010
SOURCE
Applied Physics Letters;6/7/2010, Vol. 96 Issue 23, p232101
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The evolution of native defect states near conduction band present in ZnO thin films is correlated with the bulk electron density and mobility changes driven by the thermal structure modification. The evolution of band edge electronic structures of ZnO thin films was studied via the spectroscopic detection of empty localized defect states in conduction band (CB) edge and occupied defect states in valence band using spectroscopic ellipsometry and x-ray photoemission spectroscopy. The energy depth of native defect states against CB edge revealed the direct correlation to Hall mobility values for ZnO thin films.
ACCESSION #
51378994

 

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