Memory mechanisms of vertical organic memory transistors

Li-Zhen Yu; Hung-Chun Chen; Ching-Ting Lee
June 2010
Applied Physics Letters;6/7/2010, Vol. 96 Issue 23, p233301
Academic Journal
Three-terminal vertical organic memory transistors were fabricated to investigate the memory mechanisms and the relation between memory behavior and applied electrical field. The 9,10-di(2-naphthyl)anthracene was used as the active channel layer for the organic memory transistors. In both the ON and OFF state of the organic memory transistors, the drain-source currents (IDS) were modulated by applying various gate-source voltages (VGS). The switching drain-source voltage (VDS) decreased with an increase in applied VGS voltages. The ON/OFF IDS current ratio of the organic memory transistors could be modulated up to the maximum value of 2.02×105 by applying VGS voltage bias.


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