Planar semipolar [formula] GaN on [formula] sapphire

Schwaiger, Stephan; Argut, Ilona; Wunderer, Thomas; Rösch, Rudolf; Lipski, Frank; Biskupek, Johannes; Kaiser, Ute; Scholz, Ferdinand
June 2010
Applied Physics Letters;6/7/2010, Vol. 96 Issue 23, p231905
Academic Journal
We report on the growth of planar semipolar [formula] GaN on [formula] prepatterned sapphire. This is a method that allows the growth of semipolar oriented [formula] GaN on large scale. Using x-ray diffraction only the peaks of the desired [formula] plane could be observed. Scanning electron, transmission electron, and atomic force microscopy measurements show an atomically flat surface. Further investigations using photoluminescence spectroscopy show spectra that are dominated by the near band edge emission. The high crystal quality is furthermore confirmed by the small full width at half maximum values of x-ray rocking curve measurements of less than 400 arcsec.


Related Articles

  • Structure and conditions for the formation of fullerite crystallites in Sn-C60 films. Baran, L. // Crystallography Reports;Jan2009, Vol. 54 Issue 1, p106 

    The structure of tin-fullerite films with different thicknesses of the Sn coating layer (50, 100, 200, 300, 450, and 700 nm) and the conditions for the formation and growth of fullerite crystallites on the tin surface during sample exposure in air have been investigated. The methods of X-ray...

  • Growth of AlGaN/GaN heterojunction field effect transistors on semi-insulating GaN using an AlGaN interlayer. Chen, Z.; Pei, Y.; Newman, S.; Chu, R.; Brown, D.; Chung, R.; Keller, S.; Denbaars, S. P.; Nakamura, S.; Mishra, U. K. // Applied Physics Letters;3/16/2009, Vol. 94 Issue 11, p112108 

    Semi-insulating (SI) GaN layers were grown on 4H-SiC substrates by inserting an AlGaN layer between the AlN buffer and the GaN layer. Secondary ion mass spectroscopy measurements showed that the AlGaN layer prevented Si from diffusing from the substrate into the GaN layer. X-ray diffraction and...

  • Buffer layer effect on the structural and electrical properties of rubrene-based organic thin-film transistors. Seo, J. H.; Park, D. S.; Cho, S. W.; Kim, C. Y.; Jang, W. C.; Whang, C. N.; Yoo, K.-H.; Chang, G. S.; Pedersen, T.; Moewes, A.; Chae, K. H.; Cho, S. J. // Applied Physics Letters;10/16/2006, Vol. 89 Issue 16, p163505 

    The structural and electrical properties of organic thin-film transistors with rubrene/pentacene and pentacene/rubrene bilayered structures were investigated using x-ray diffraction, atomic force microscopy, and x-ray emission spectroscopy. High-quality rubrene thin films with orthorhombic...

  • Preparation of hollow spherical magnetite nanoparticles. Gorbik, P. P.; Dubrovin, I. V.; Demchenko, Yu. A.; Filonenko, M. N.; Abramov, N. V. // Inorganic Materials;Nov2009, Vol. 45 Issue 12, p1351 

    We have developed and tested procedures for the synthesis of hollow spherical magnetite nanoparticles and analyzed the general mechanisms of their formation in relation to their structure and morphology. The phase composition, elemental composition, and morphology of the synthesized particles...

  • Synthesis of PANI/TiO2–Fe3+ nanocomposite and its photocatalytic property. Jinzhang Gao; Shengying Li; Wu Yang; Gang Ni; Lili Bo // Journal of Materials Science;May2007, Vol. 42 Issue 9, p3190 

    A convenient method for synthesizing highly photocatalytic activity PANI/TiO2–Fe3+ nanocomposite was developed. The effect of calcination temperature on the phase composition of TiO2 nanopowder was investigated. It was found that higher temperature could promote the formation of rutile...

  • Laser annealed HfxZr1-xO2 high-k dielectric: Impact on morphology, microstructure, and electrical properties. Triyoso, Dina H.; Spencer, Greg; Hegde, Rama I.; Gregory, Rich; Xiang-Dong Wang // Applied Physics Letters;3/17/2008, Vol. 92 Issue 11, p113501 

    The impact of microsecond laser annealing at 1325 °C on physical and electrical characteristics of HfxZr1-xO2 is compared to films annealed at 1000 °C for 5 s by a conventional rapid thermal process (RTP). Atomic force microscopy analysis shows that laser annealed HfxZr1-xO2 is smoother...

  • Epitaxial layer-by-layer growth of Yb:YAG and YbAG PLD-films. Gün, Teoman; Kuzminykh, Yury; Tellkamp, Friedjof; Petermann, Klaus; Huber, Günter // Applied Physics A: Materials Science & Processing;Nov2008, Vol. 93 Issue 2, p387 

    In this contribution, we report on the 2-dimensional (2D) layer-by-layer growth of Yb(10%):Y3Al5O12 (YAG) and Yb3Al5O12 (YbAG) PLD-films on {100}-oriented YAG. The epitaxial growth was observed in situ by Reflection High Energy Electron Diffraction (RHEED) as intensity oscillations of the...

  • Nitrate-based metalorganic deposition of CeO2 on yttria-stabilized zirconia. Wesolowski, D. E.; Cima, M. J. // Journal of Materials Research;Jan2006, Vol. 21 Issue 1, p1 

    An aqueous nitrate metalorganic deposition (MOD) process was used to form a 30-nm-thick c-axis-textured ceria (CeO2) layer on a yttria-stabilized zirconia (YSZ) single-crystal substrate. X-ray diffraction showed the CeO2 layer was an (001) oriented film with a ω-scan full width at...

  • Imaging Surface Pits and Dislocations in 4H-SiC by Forescattered Electron Detection and Photoluminescence. Picard, Y. N.; Liu, K. X.; Stahlbush, R. E.; Twigg, M. E. // Journal of Electronic Materials;May2008, Vol. 37 Issue 5, p655 

    Forescattered electron detection (FED) was utilized to image surface depressions resulting from threading screw and edge dislocations in 4H-SiC epitaxial layers. These surface depressions, or growth pits, exhibited two morphology types. Screw and edge dislocations could be imaged by...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics