Retardation of electromigration-induced Ni(P) consumption by an electroless Pd insertion layer

Lu, C. T.; Tseng, H. W.; Chang, C. H.; Huang, T. S.; Liu, C. Y.
June 2010
Applied Physics Letters;6/7/2010, Vol. 96 Issue 23, p232103
Academic Journal
In this study, Ni(P) bond pads joined with Sn solder bumps were stressed with a high current density of 104 A/cm2. Serious electromigration-induced Ni(P) consumption and unusual EM-enhanced diffusion of the interfacial Ni3Sn4 compound layer are observed. However the observed EM-induced Ni(P) consumption and EM-enhanced diffusion of the interfacial Ni3Sn4 compound layer can be effectively retarded by introducing an additional electroless Pd layer on the Ni(P) layer. The improvement in EM resistance due to the Pd layer can be attributed to PdSn4 formation and Pd solutes in the interfacial Ni3Sn4 layer.


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